Patents by Inventor Dekui Qi

Dekui Qi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340303
    Abstract: A semiconductor device includes a device substrate having a dielectric layer and a metal wire in the dielectric layer, a first opening on the metal wire and having a bottom at a depth the same as an upper surface of the metal wire, a first insulation layer including a first color filter material on sidewalls of the first opening, a second opening disposed at opposite ends of the semiconductor device and having a bottom at a depth the same as the depth of the bottom of the first opening, and a second insulation layer including a second color filter material on sidewalls of the second opening. The first opening is for leading out the metal wire to a pad. The second opening is disposed along scribe lines. The semiconductor device simplifies the process of drawing out and isolating the pads and satisfies technical requirements of a back seal ring.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: July 2, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Dekui Qi, Fucheng Chen
  • Patent number: 10319518
    Abstract: A method of fabricating a spiral inductor includes providing a substrate having a top surface and a bottom surface, forming a plurality of through holes aligned in a vertical plane and spaced apart from each other, forming a metal interconnect structure having at least one top metal layer on the top surface of the substrate, the metal interconnect structure configured to connect to a top portion of the through holes, and forming a redistribution layer having at least a bottom layer on the bottom surface of the substrate. The redistribution layer is configured to connect to a bottom portion of the through holes to form a spiral structure.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: June 11, 2019
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Dekui Qi, Haifang Zhang, Xuanjie Liu, Zheng Chen, Xin Li
  • Publication number: 20180323226
    Abstract: A semiconductor device includes a device substrate having a dielectric layer and a metal wire in the dielectric layer, a first opening on the metal wire and having a bottom at a depth the same as an upper surface of the metal wire, a first insulation layer including a first color filter material on sidewalls of the first opening, a second opening disposed at opposite ends of the semiconductor device and having a bottom at a depth the same as the depth of the bottom of the first opening, and a second insulation layer including a second color filter material on sidewalls of the second opening. The first opening is for leading out the metal wire to a pad. The second opening is disposed along scribe lines. The semiconductor device simplifies the process of drawing out and isolating the pads and satisfies technical requirements of a back seal ring.
    Type: Application
    Filed: March 15, 2018
    Publication date: November 8, 2018
    Inventors: DEKUI QI, Fucheng Chen
  • Publication number: 20180247762
    Abstract: A method of fabricating a spiral inductor includes providing a substrate having a top surface and a bottom surface, forming a plurality of through holes aligned in a vertical plane and spaced apart from each other, forming a metal interconnect structure having at least one top metal layer on the top surface of the substrate, the metal interconnect structure configured to connect to a top portion of the through holes, and forming a redistribution layer having at least a bottom layer on the bottom surface of the substrate. The redistribution layer is configured to connect to a bottom portion of the through holes to form a spiral structure.
    Type: Application
    Filed: April 25, 2018
    Publication date: August 30, 2018
    Inventors: Dekui Qi, Haifang Zhang, Xuanjie Liu, Zheng Chen, Xin Li
  • Patent number: 9984819
    Abstract: A spiral inductor formed in a vertical plane relative to a planar surface of a substrate includes a plurality of through holes disposed in the vertical plane and spaced apart from each other, a metal interconnect structure on the top surface, and a redistribution layer on the bottom surface and having at least one bottom metal layer. The metal interconnect structure and the redistribution layer are connected to each other through the plurality of through holes to form the vertical spiral inductor. The thus formed vertical spiral inductor has a significantly reduced surface area comparing with lateral spiral inductors.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: May 29, 2018
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Dekui Qi, Haifang Zhang, Xuanjie Liu, Zheng Chen, Xin Li
  • Publication number: 20150302975
    Abstract: A spiral inductor formed in a vertical plane relative to a planar surface of a substrate includes a plurality of through holes disposed in the vertical plane and spaced apart from each other, a metal interconnect structure on the top surface, and a redistribution layer on the bottom surface and having at least one bottom metal layer. The metal interconnect structure and the redistribution layer are connected to each other through the plurality of through holes to form the vertical spiral inductor. The thus formed vertical spiral inductor has a significantly reduced surface area comparing with lateral spiral inductors.
    Type: Application
    Filed: April 15, 2015
    Publication date: October 22, 2015
    Inventors: Dekui Qi, Haifang Zhang, Xuanjie Liu, Zheng Chen, Xin Li