Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.

Abstract: An apparatus comprises a unitary laser diode comprising an array of two or more active regions, at least one of which outputs a light beam in response to an input current. The apparatus also includes two or more waveguides, each waveguide corresponding to an active region of the array. At least one of the waveguides receives the at least one light beam from the at least one active region.

Abstract: An apparatus comprises a unitary laser diode comprising an array of two or more active regions, at least one of which outputs a light beam in response to an input current. The apparatus also includes two or more waveguides, each waveguide corresponding to an active region of the array. At least one of the waveguides receives the at least one light beam from the at least one active region.

Abstract: A head assembly includes a submount, a body with a first surface, an optical path, a near field transducer (NFT), a sensor, and a laser. The optical path is disposed in the body and is adapted to receive light and convey the light to a distal end of the waveguide. The near field transducer (NFT) is disposed adjacent the distal end of the waveguide and has an output end proximate the first surface of the body. The sensor interfaces with the submount and the laser is attached to the submount along a non-primary lasing surface. The laser is adapted to inject light into the waveguide and includes a grating adapted to diffract a portion of the light through the non-primary lasing surface to the sensor.

Abstract: A head assembly includes a submount, a body with a first surface, an optical path, a near field transducer (NFT), a sensor, and a laser. The optical path is disposed in the body and is adapted to receive light and convey the light to a distal end of the waveguide. The near field transducer (NFT) is disposed adjacent the distal end of the waveguide and has an output end proximate the first surface of the body. The sensor interfaces with the submount and the laser is attached to the submount along a non-primary lasing surface. The laser is adapted to inject light into the waveguide and includes a grating adapted to diffract a portion of the light through the non-primary lasing surface to the sensor.

Abstract: A device includes a body, a waveguide, and a near field transducer (NFT). The body has opposed first and second surfaces. The waveguide is adapted to receive light and convey the light to a distal end of the waveguide. The NFT is disposed proximate the distal end, and it has an output end proximate the first surface of the body. The device further includes a surface-emitting distributed feedback (SE-DFB) laser that is mounted on and attached to the body and positioned to inject laser light into the waveguide. The device may be a recording head, and the laser, the waveguide, and the NFT may cooperate to provide electromagnetic heating to a substrate for heat assisted magnetic recording.

Abstract: A vertical-cavity surface-emitting semiconductor laser array device includes a semiconductor substrate and a multilayer structure on the substrate that includes at least four core elements arranged in a two-dimensional rectangular array, with the core elements separated from one another and surrounded by a matrix region formed to have an effective higher index than the core elements for antiguiding of the radiation leakage from the core elements. The width of the matrix region separating adjacent core elements may be selected to provide either in-phase or out-of-phase resonant coupling between the adjacent core elements, and the matrix region and upper and lower reflectors are positioned to act upon the light generated in an active region layer to produce lasing action phase-locked between the core elements to produce emission of light from at least one of the upper or lower faces of the semiconductor laser array.

Abstract: A vertical-cavity surface-emitting semiconductor laser array device includes a semiconductor substrate and a multilayer structure on the substrate that includes at least four core elements arranged in a two-dimensional rectangular array, with the core elements separated from one another and surrounded by a matrix region formed to have an effective higher index than the core elements for antiguiding of the radiation leakage from the core elements. The width of the matrix region separating adjacent core elements may be selected to provide either in-phase or out-of-phase resonant coupling between the adjacent core elements, and the matrix region and upper and lower reflectors are positioned to act upon the light generated in an active region layer to produce lasing action phase-locked between the core elements to produce emission of light from at least one of the upper or lower faces of the semiconductor laser array.

Abstract: A vertical cavity surface emitting semiconductor laser is formed with a multilayer structure on a semiconductor substrate that includes an active region layer, a central core, and an antiresonant reflecting waveguide ring surrounding the central core. The ring includes a region formed to have an effective higher index than the central core and sized to provide antiresonant lateral waveguiding confinement of a fundamental mode wavelength. Reflectors formed above and below the active region layer provide vertical confinement. The antiresonant reflecting ring may be formed either as a full ARROW structure including a quarter wavelength high effective index region and a quarter wavelength low effective index region or as a simplified ARROW structure having a single quarter wavelength high effective index region.