Abstract: A method and apparatus are provided for implementing enhanced detection of circuit design limitations and stresses via enhanced waveform and schematic display. A selected simulation is run, for example, a transient, an AC, or a DC simulation. Then a displayed schematic highlights problem areas using a color set selected by a circuit designer.

Abstract: A triple-well CMOS structure having reduced latch-up susceptibility and a method of fabricating the structure. The method includes forming a buried P-type doped layer having low resistance under the P-wells and N-wells in which CMOS transistors are formed and forming a gap in a buried N-type doped layer formed in the P-wells, the is gap aligned under a contact to the P-well. The buried P-type doped layer and gap in the buried N-type doped layer allow a low resistance hole current path around parasitic bipolar transistors of the CMOS transistors.

Abstract: A method and apparatus are provided for detection and prevention of bulk complementary metal oxide semiconductor (CMOS) latchup. A separate power distribution is provided for coupling a positive voltage supply rail to the N well and a ground voltage supply rail to the P well of the CMOS circuit. At least one sensor monitors current flow in a bias voltage applied to at least one of an N well and a P well of the CMOS circuitry. A latchup event is detected responsive to a predefined increase in the monitored current flow. A switch temporarily interrupts the connection of at least one of the N well and the P well to the respective voltage supply rail when the latchup event is detected.

Abstract: A triple-well CMOS structure having reduced latch-up susceptibility and a method of fabricating the structure. The method includes forming a buried P-type doped layer having low resistance under the P-wells and N-wells in which CMOS transistors are formed and forming a gap in a buried N-type doped layer formed in the P-wells, the is gap aligned under a contact to the P-well. The buried P-type doped layer and gap in the buried N-type doped layer allow a low resistance hole current path around parasitic bipolar transistors of the CMOS transistors.

Abstract: A dual mode, analog differential and complementary metal oxide semiconductor (CMOS) logic circuit is provided. The circuit includes a differential input for receiving a differential input signal. A switch pair is coupled to the differential input. A pair of load resistors coupled to the switch pair defines a differential output for providing a differential output signal. A current source is coupled to the switch pair. A control input receives a control signal and control circuitry coupled to the control input disable the current source to select a CMOS testing mode responsive to the control signal being activated.

Abstract: A system for transmitting and receiving data between the near end to the far end of a transmission line. The system has simultaneous bi-directional (SBIDI) drivers and receivers for high performance over well behaved transmission lines. The SBIDI drivers and SBIDI receivers are enabled and disabled by logic inputs. A unidirectional (UNI) receiver is connected in parallel with each SBIDI receivers. Logic insures that the SBIDI and UNI receivers are not enabled at the same time. When desired, the SBIDI receivers are disabled and the UNI receivers enabled and signaling is done unidirectional. The current level in the SBIDI drivers may be modified in response to mode compensation signals to improve signal to noise in the unidirectional mode and to compensate for losses in the simultaneous bi-directional mode. The system may be integrated into all I/O's for maximum design flexibility.

Abstract: A system for transmitting and receiving data between the near end to the far end of a transmission line. The system has simultaneous bi-directional (SBIDI) drivers and receivers for high performance over well behaved transmission lines. The SBIDI drivers and SBIDI receivers are enabled and disabled by logic inputs. A unidirectional (UNI) receiver is connected in parallel with each SBIDI receivers. Logic insures that the SBIDI and UNI receivers are not enabled at the same time. When desired, the SBIDI receivers are disabled and the UNI receivers enabled and signaling is done unidirectional. The current level in the SBIDI drivers may be modified in response to mode compensation signals to improve signal to noise in the unidirectional mode and to compensate for losses in the simultaneous bi-directional mode. The system may be integrated into all I/O's for maximum design flexibility.

Abstract: A resistance circuit includes an off-chip resistor having a precision resistance; a plurality of on-chip switchable resistors, each of which is capable being switched so as to be coupled in parallel to a nominal resistor; and a resistance comparison unit. The resistance comparison unit compares a plurality of on-chip comparison resistors to the off-chip resistor and couples a number of the on-chip switchable resistors to the nominal resistor so that the combined resistance of the parallel combination of the nominal resistor and the coupled on-chip switchable resistors is within a predetermined range of the precision resistance.

Abstract: A customizable integrated circuit device is disclosed that is capable of having unique data selected for controlling the functionality or configurability of the integrated circuit. The integrated circuit device has a microcontroller unit, a plurality of function units, coupled to the microcontroller unit, and a novel customization logic unit, also coupled to the microcontroller unit. A plurality of signal selectors, further coupled to the customization logic, either on the integrated circuit or on the mounting module to which the integrated circuit is afixed, are selected to control a signal generated by the customization logic to the microcontroller. The customization logic unit may use data that represents a serial number, performance characteristics, such as operational speed, or qualified external working configurations, such as mainstore or caching configurations, associated with the integrated circuit and as selected by the signal selectors.

Abstract: An elastic buffer utilizes a circular buffer for receiving successive symbols over a communications link. The transmission clock of the received symbols and internal clock of the node on which the elastic buffer is located are independent. The transmission clock is used to load the successive symbols received over the transmission link into the circular buffer. The internal clock controls reading of the successive symbols from the circular buffer. A phase comparator operating on the transmission and internal clocks periodically generates an input side skip signal when the transmission clock overtakes the phase of the internal clock and an output side skip signal when the internal clock overtakes the phase of the external clock. An idle symbol detector monitors the successive symbols generates an idle indication when an idle symbol occurs. Responsive to concurrence of an input side skip signal and an idle indication, loading of an idle symbol from successive symbols into the circular buffer is omitted.

Abstract: An ECL logic circuit uses a single resistor in place of separate current-source and emitter-follower resistors. A single tap connects a point on this resistor to the ground bus, and the signal-output line connects to this resistor by a contact which is separate from the contact connecting the emitter of the ouput transistor to the resistor.

Abstract: A high speed, high performance CMOS to GPI interface circuit is disclosed. The interface circuit contains an input stage, clamping circuitry, an output stage and feedback circuitry. The clamping circuitry clamps the voltage level presented to the output stage at a level below the power supply voltage when the input from the CMOS circuit is at a high logic level. As the voltage level of the signal presented to the CPI circuitry rises, feedback circuitry feeds this signal back to the clamping circuitry, which in turn decreases the voltage level presented to the output stage. This assures the signal presented to the GPI circuit falls within the specified voltage level from 1.51 and 2.2 volts. The feedback circuitry contains a single pole filter that filters out high frequency reflections presented to the feedback circuitry, and a slew rate limiter that slows the rise and fall of the voltage level presented to the output stage thereby reducing noise on the power supply and ground lines.