Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an ??-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material.

Abstract: There are provided systems and methods for pairwise graph querying, merging, and computing for account linking. A service provider may provide an account graph system to identify pairwise similarities between different accounts based on shared data that may be identified through one or more linking characteristics. When providing pairwise graph similarities, a service provider may receive a query identifying two or more accounts and/or an account with a parameter for graph exploration and querying. The service provider may utilize connection, link, or relationship graphs, queried and generated using a graph database, to determine pairwise similarities between the designated seed account and one or more selected accounts. The graph may include vertices for different queried data points and edges connecting such queries, where directionality of the edges or other vectors may be used to identify links or hops between accounts for data querying and exploration.

Abstract: All example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average wain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including au iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 ma. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an ??-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material.

Abstract: An example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average grain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including an iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 nm. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

Abstract: A magnetic device includes a layer stack comprising a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; a dielectric barrier layer on the second ferromagnetic layer; an insertion layer positioned between the second ferromagnetic layer and the dielectric barrier layer; and a fixed layer or an electrode on the dielectric barrier layer. In some examples, a magnetic orientation of the second ferromagnetic layer is switched by a bias voltage across the layer stack without application of an external magnetic field; an antiferromagnetic coupling of the first and second ferromagnetic layers is increased by the bias voltage applying a negative charge to the fixed layer or the electrode, and the antiferromagnetic coupling of the first and second ferromagnetic layers is decreased by the bias voltage applying a positive charge to the fixed layer or the electrode.

Abstract: A magnetic device may include a layer stack including a work function structure, a dielectric layer, and a ferromagnetic layer, where the ferromagnetic layer is positioned between the work function structure and the dielectric layer. The work function structure is configured to deplete electrons from the ferromagnetic layer or accumulate electrons in the ferromagnetic layer. A magnetization orientation of the ferromagnetic layer is configured to be switched by a voltage applied across the layer stack or by a voltage applied across or through the work function structure.

Abstract: A magnetic device may include a layer stack including a work function structure, a dielectric layer, and a ferromagnetic layer, where the ferromagnetic layer is positioned between the work function structure and the dielectric layer. The work function structure is configured to deplete electrons from the ferromagnetic layer or accumulate electrons in the ferromagnetic layer. A magnetization orientation of the ferromagnetic layer is configured to be switched by a voltage applied across the layer stack or by a voltage applied across or through the work function structure.

Abstract: A magnetic device includes a layer stack comprising a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; a dielectric barrier layer on the second ferromagnetic layer; an insertion layer positioned between the second ferromagnetic layer and the dielectric barrier layer; and a fixed layer or an electrode on the dielectric barrier layer. In some examples, a magnetic orientation of the second ferromagnetic layer is switched by a bias voltage across the layer stack without application of an external magnetic field; an antiferromagnetic coupling of the first and second ferromagnetic layers is increased by the bias voltage applying a negative charge to the fixed layer or the electrode, and the antiferromagnetic coupling of the first and second ferromagnetic layers is decreased by the bias voltage applying a positive charge to the fixed layer or the electrode.

Abstract: An example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average grain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including an iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 nm. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; and a dielectric barrier layer on the second ferromagnetic layer. In some examples, the layer stack may also include an additional ferromagnetic layer and an additional spacer layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field.

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; and a dielectric barrier layer on the second ferromagnetic layer. In some examples, the layer stack may also include an additional ferromagnetic layer and an additional spacer layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field.

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

Abstract: Embodiments of the present invention relate to the field of Internet technologies, and disclose an application control method and a terminal device. The method includes: determining whether a currently running application meets a condition for casting a skill, and if the currently running application meets the condition for casting a skill, outputting a skill name corresponding to at least one castable skill; detecting a target skill name input by a user in voice mode; recognizing the target skill name and determining whether the target skill name belongs to the output skill name corresponding to the at least one castable skill; and if the target skill name belongs to the output skill name corresponding to the at least one castable skill, casting a skill corresponding to the target skill name in the application. By implementing embodiments of the present invention, applications may be controlled easily.

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

Abstract: Articles including a fixing layer and a free layer including a layer including an FePd alloy. The free layer may include a composite layer including a perpendicular synthetic antiferromagnetic (p-SAF) structure. Techniques for forming and using articles including FePd alloy layers or p-SAF structures. Example articles and techniques may be usable for storage and logic devices.

Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an ??-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material.

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

Abstract: Articles including a fixing layer and a free layer including a layer including an FePd alloy. The free layer may include a composite layer including a perpendicular synthetic antiferromagnetic (p-SAF) structure. Techniques for forming and using articles including FePd alloy layers or p-SAF structures. Example articles and techniques may be usable for storage and logic devices.