Patents by Inventor Delores Bennett

Delores Bennett has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reworking low-k polymers used in semiconductor structures
    Patent number: 6864180
    Abstract: A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.
    Type: Grant
    Filed: October 2, 2001
    Date of Patent: March 8, 2005
    Assignee: International Business Machines Corporation
    Inventors: Darryl D. Restaino, Delores Bennett, John A. Fitzsimmons, John Fritche, Jeffrey C. Hedrick, Chih-Chien Liu, Shahab Siddiqui, Christy S. Tyberg
  • Method for eliminating via resistance shift in organic ILD
    Patent number: 6806182
    Abstract: Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.
    Type: Grant
    Filed: May 1, 2002
    Date of Patent: October 19, 2004
    Assignees: International Business Machines Corporation, Infineon Technologies, AG, United Microelectronics Co.
    Inventors: Darryl Restaino, Shahab Siddiqui, Erdem Kaltalioglu, Delores Bennett, Chih-Chih Liu, Hsueh-Chung Chen, Tong-Yu Chen, Gwo-Shii Yang, Chiung-Sheng Hsiung
  • Method for eliminating VIA resistance shift in organic ILD
    Publication number: 20030207559
    Abstract: Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.
    Type: Application
    Filed: May 1, 2002
    Publication date: November 6, 2003
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, Infineon Technologies North America Corp., United Microelectronics Co.
    Inventors: Darryl Restaino, Shahab Siddiqui, Erdem Kaltalioglu, Delores Bennett, C. C. Liu, Hsueh-Chung Chen, Tong-Yu Chen, Gwo-Shii Yang, Chiung-Sheng Hsiung
  • Method for reworking low-K polymers used in semiconductor structures
    Publication number: 20030062336
    Abstract: A method for removing a dielectric layer formed upon a semiconductor substrate is disclosed. In an exemplary embodiment of the invention, the method includes subjecting the dielectric layer to a dry etch process and subjecting an adhesion promoter layer underneath the dielectric layer to a wet etch process.
    Type: Application
    Filed: October 2, 2001
    Publication date: April 3, 2003
    Applicant: International Business Machines Corporation
    Inventors: Darryl D. Restaino, Delores Bennett, John A. Fitzsimmons, John Fritche, Jeffrey C. Hedrick, Chih-Chien Liu, Shahab Siddiqui, Christy S. Tyberg
  • Selective dry etch of a dielectric film
    Patent number: 6294102
    Abstract: A process of etching an oxide layer placed over a nitride layer of a substrate with high selectivity. The process comprises plasma etching the oxide layer of the substrate with a carbon and fluorine-containing gas and with a nitrogen-containing gas. A SixNy species is formed which is deposited on the nitride layer substantially in equilibrium with etching of the nitride layer.
    Type: Grant
    Filed: May 5, 1999
    Date of Patent: September 25, 2001
    Assignee: International Business Machines Corporation
    Inventors: Delores A. Bennett, James P. Norum, Hongwen Yan, Chienfan Yu