Abstract: An ultrathin power semiconductor package with high thermal dissipation performance and its preparation method are disclosed. The package includes a lead frame unit with a staggered structure including an upper section and a lower section. A thin layer is attached on the surface of the lead frame unit having a plurality of contact holes on the upper section and at least one opening on the lower section. A semiconductor chip is attached on the opening on the lower section of the lead frame unit and then a plurality of metal bumps are deposited, where one metal bump is formed on each contact hole on the upper section and on each of the electrodes on the top surface of the semiconductor chip.

Abstract: An ultrathin power semiconductor package with high thermal dissipation performance and its preparation method are disclosed. The package includes a lead frame unit with a staggered structure including an upper section and a lower section. A thin layer is attached on the surface of the lead frame unit having a plurality of contact holes on the upper section and at least one opening on the lower section. A semiconductor chip is attached on the opening on the lower section of the lead frame unit and then a plurality of metal bumps are deposited, where one metal bump is formed on each contact hole on the upper section and on each of the electrodes on the top surface of the semiconductor chip.

Abstract: A power module is proposed to package an electronic system having flip chip power MOSFET devices. The power module includes a front surface cover board and a multi-layer printed circuit laminate bonded thereto. Notably, the front surface of the printed circuit laminate includes recessed pockets each having printed circuit traces atop its floor. Inside the recessed pockets are power MOSFET and other circuit components bonded to the printed circuit traces. As the circuit components are encased inside the power module, it features a low profile, an increased mechanical robustness and EMI/RFI immunity. Additionally, some circuit components can be provided with a front-side bonding layer that is also bonded to the front surface cover board to realize a double-side bonding to the interior of the power module. Methods for making the low profile power module are also described.

Abstract: A power module is proposed to package an electronic system having flip chip power MOSFET devices. The power module includes a front surface cover board and a multi-layer printed circuit laminate bonded thereto. Notably, the front surface of the printed circuit laminate includes recessed pockets each having printed circuit traces atop its floor. Inside the recessed pockets are power MOSFET and other circuit components bonded to the printed circuit traces. As the circuit components are encased inside the power module, it features a low profile, an increased mechanical robustness and EMI/RFI immunity. Additionally, some circuit components can be provided with a front-side bonding layer that is also bonded to the front surface cover board to realize a double-side bonding to the interior of the power module. Methods for making the low profile power module are also described.

Abstract: A flip chip mounted semiconductor device package having a dimpled leadframe is disclosed. The semiconductor device package includes a leadframe having a plurality of source dimples and a gate dimple, and a semiconductor die having a plurality of source contact areas and a gate contact area corresponding to the leadframe source dimples and gate dimple respectively, the semiconductor die being flipped onto the leadframe such that cured conductive epoxy provides electrical and mechanical contact between the plurality of source contact areas and the plurality of source dimples, and the gate contact area and the gate dimple.

Abstract: A power module is proposed to package an electronic system having flip chip power MOSFET devices. The power module includes a front surface cover board and a multi-layer printed circuit laminate bonded thereto. Notably, the front surface of the printed circuit laminate includes recessed pockets each having printed circuit traces atop its floor. Inside the recessed pockets are power MOSFET and other circuit components bonded to the printed circuit traces. As the circuit components are encased inside the power module, it features a low profile, an increased mechanical robustness and EMI/RFI immunity. Additionally, some circuit components can be provided with a front-side bonding layer that is also bonded to the front surface cover board to realize a double-side bonding to the interior of the power module. Methods for making the low profile power module are also described.

Abstract: A wafer level bumpless method of making flip chip mounted semiconductor device packages is disclosed. The method includes the steps of solder mask coating a semiconductor die wafer frontside, processing the solder mask coating to reveal a plurality of gate contact and a plurality of source contacts, patterning a lead frame with target dimple areas, creating dimples in the lead frame corresponding to the gate contact and source contacts, printing a conductive epoxy on the lead frame in the dimples, curing the lead frame and semiconductor die wafer together, and dicing the wafer to form the semiconductor device packages.

Abstract: A common drain dual MOSFET chip scale package and a method of fabricating same are provided.

Abstract: A wafer level bumpless method of making flip chip mounted semiconductor device packages is disclosed. The method includes the steps of solder mask coating a semiconductor die wafer frontside, processing the solder mask coating to reveal a plurality of gate contact and a plurality of source contacts, patterning a lead frame with target dimple areas, creating dimples in the lead frame corresponding to the gate contact and source contacts, printing a conductive epoxy on the lead frame in the dimples, curing the lead frame and semiconductor die wafer together, and dicing the wafer to form the semiconductor device packages.

Abstract: A wafer level bumpless method of making flip chip mounted semiconductor device packages is disclosed. The method includes the steps of solder mask coating a semiconductor die wafer frontside, processing the solder mask coating to reveal a plurality of gate contact and a plurality of source contacts, patterning a lead frame with target dimple areas, creating dimples in the lead frame corresponding to the gate contact and source contacts, printing a conductive epoxy on the lead frame in the dimples, curing the lead frame and semiconductor die wafer together, and dicing the wafer to form the semiconductor device packages.