Patents by Inventor Dena C. A. Mitchell

Dena C. A. Mitchell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In-situ epitaxial passivation for resistivity measurement
    Patent number: 5872017
    Abstract: A method for preparing an epitaxial silicon wafer in a reactor is provided. The method comprises the steps of depositing an epitaxial layer on a surface of a silicon wafer contained in the reactor at an elevated temperature; purging the reactor with hydrogen after the epitaxial deposition; and cooling the reactor to an appropriate temperature which allows hydrogen passivation of the surface of the epitaxial layer. This prevents the formation of an oxide layer on the surface of the epitaxial layer for a sufficient amount of time to allow an accurate measurement of a carrier density profile of the epitaxial silicon wafer.
    Type: Grant
    Filed: January 24, 1997
    Date of Patent: February 16, 1999
    Assignee: SEH America, Inc.
    Inventors: Mark R. Boydston, Dena C. A. Mitchell