Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: A high frequency plasma apparatus includes a reaction chamber, a first electrode, a second electrode, and a plurality of feed points located at one of the two electrodes at least. The feed points are used to simultaneously generate a first standing wave and a second standing wave, with different temporal and spatial patterns. By adjusting amplitudes of the two standing waves and the temporal and spatial phase differences between the two standing waves appropriately, plasma uniformity of the high frequency plasma apparatus can be effectively improved.

Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: A large-area plasma generating apparatus is disclosed, which includes a reaction chamber; a first electrode disposed in the reaction chamber; a second electrode parallel with the first electrode and disposed in the reaction chamber; and a discharge region formed between the first and second electrodes and a plasma can be formed therein; wherein a travelling wave or a traveling-wave-like electromagnetic field is generated via at least one of the first and second electrodes and travels from one end of the discharge region to its opposite end, so as to uniform the plasma in the discharge region.

Abstract: A large-area plasma generating apparatus is disclosed, which includes a reaction chamber; a first electrode disposed in the reaction chamber; a second electrode parallel with the first electrode and disposed in the reaction chamber; and a discharge region formed between the first and second electrodes and a plasma can be formed therein; wherein a travelling wave or a traveling-wave-like electromagnetic field is generated via at least one of the first and second electrodes and travels from one end of the discharge region to its opposite end, so as to uniform the plasma in the discharge region.

Abstract: A gas isolation chamber comprises a vacuum chamber, a first body module, a second body module and a first temperature modulator. The vacuum chamber comprises a first chamber part, a second chamber part and at least one first gas valve unit. The first body module is disposed on the inner wall of the first chamber part and has a first gas hole corresponding to the position of the first gas valve unit. The first gas hole is connected to the first gas valve unit. The second body module is disposed on the inner wall of the second chamber part such that a slit channel can be formed between the second and the first body modules. The first temperature modulator is disposed in the first body module. The gas isolation chamber is further combined with the vacuum film process chambers to form a plasma deposition apparatus for proceeding continuous deposition process.

Abstract: An apparatus provides large area atmospheric pressure plasma enhanced chemical vapor deposition without contaminations in its electrode assembly and deposited films. The apparatus consists of a large area vertical planar nitrogen plasma activation electrode assembly and its high voltage power supply, a large area vertical planar nitrogen plasma deposition electrode assembly and its high voltage power supply, a long-line uniform precursor jet apparatus, a roll-to-roll apparatus for substrate movement, and a sub-atmospheric pressure deposition chamber and its pumping apparatus.

Abstract: An RF hollow cathode plasma source consists of a vacuum chamber, a pipe, a hollow cathode, at least two compartments, a conduit and input electrodes. The pipe is inserted into the chamber for introducing working gas into the chamber. The hollow cathode is disposed in the chamber and formed with a large number of apertures. At least two compartments are located below the hollow cathode. Each of the compartments includes small apertures for uniformly spreading the working gas into the apertures of the hollow cathode. The conduit is disposed along two sides of the hollow cathode to circulate cooling water around the hollow cathode. The plural input power leads are arranged near the hollow cathode. The input power leads, the pipe and the conduits are connected to the hollow cathode though the electrically-insulated walls of the grounded vacuum chamber.