Abstract: The disclosure relates to the technical field of display, in particular to a luminescent film, a preparation method thereof, and an electroluminescent device. The luminescent film comprises: a crystallized blue-light perovskite material, and halogenated amine ligand materials grafted on the crystallized blue-light perovskite material, wherein the crystallized blue-light perovskite material comprises 3D perovskite nano-crystals; and the halogenated amine ligand materials comprise a first halogenated amine ligand material and a second halogenated amine ligand material, and the first halogenated amine ligand material is different from the second halogenated amine ligand material. The disclosure is suitable for manufacturing luminescent films and electroluminescent devices.

Abstract: Provided are a perovskite film and method for manufacturing the same, a perovskite electroluminescent device and method for manufacturing the same, and a display device, which belongs to the technical field of displaying. The perovskite film comprises a crystalline perovskite and a halogenated amine ligand grafted onto the crystalline perovskite. Since the perovskite film comprises the halogenated amine ligand, the surface of the perovskite film is smooth, and the surface coverage of the crystalline perovskite is high without significant void defects. Meanwhile, the perovskite film also has a high fluorescence quantum yield due to the halogenated amine ligand comprised in the perovskite film.

Abstract: A light-emitting device and a manufacturing method thereof are disclosed. The manufacturing method of the light-emitting device includes: forming a function layer that has a first surface; performing plasma treatment on the first surface of the function layer; and forming a perovskite-type light-emitting layer on the first surface treated by the plasma treatment.

Abstract: A light-emitting device and a manufacturing method thereof are disclosed. The manufacturing method of the light-emitting device includes: forming a function layer that has a first surface; performing plasma treatment on the first surface of the function layer; and forming a perovskite-type light-emitting layer on the first surface treated by the plasma treatment.

Abstract: Provided are a perovskite film and method for manufacturing the same, a. perovskite electroluminescent device and method for manufacturing the same, and a display device, which belongs to the technical field of displaying. The perovskite film comprises a crystalline perovskite and a halogenated amine ligand grafted onto the crystalline perovskite. Since the perovskite film comprises the halogenated amine ligand, the surface of the perovskite film is smooth, and the surface coverage of the crystalline perovskite is high without significant void defects. Meanwhile, the perovskite film also has a high fluorescence quantum yield due to the halogenated amine ligand comprised in the perovskite film.

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.