Abstract: Semiconductor structures and fabrication methods are provided. The semiconductor structure includes a semiconductor substrate having a dielectric structure and having at least a first region; a plurality of first openings formed in the dielectric structure in the first region; a first barrier member formed in each of the plurality of the first openings; a plurality of second openings formed between adjacent first barrier members and with sidewall surfaces exposing sidewall surfaces of the first barrier members; and a second barrier member formed in each of the plurality second openings.

Abstract: Semiconductor structures and fabrication methods are provided. The semiconductor structure includes a semiconductor substrate having a dielectric structure and having at least a first region; a plurality of first openings formed in the dielectric structure in the first region; a first barrier member formed in each of the plurality of the first openings; a plurality of second openings formed between adjacent first barrier members and with sidewall surfaces exposing sidewall surfaces of the first barrier members; and a second barrier member formed in each of the plurality second openings.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate having at least a first region; forming a dielectric structure over the semiconductor substrate; forming a plurality of first openings in the dielectric structure in the first region by removing portions of the dielectric structure in the first region; forming a first barrier member in each of the plurality of first openings; forming second openings with sidewall surfaces exposing sidewall surfaces of the first barrier members by removing portions of the dielectric structure between adjacent first openings; and forming a second barrier member in each of the plurality of second openings.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate having at least a first region; forming a dielectric structure over the semiconductor substrate; forming a plurality of first openings in the dielectric structure in the first region by removing portions of the dielectric structure in the first region; forming a first barrier member in each of the plurality of first openings; forming second openings with sidewall surfaces exposing sidewall surfaces of the first barrier members by removing portions of the dielectric structure between adjacent first openings; and forming a second barrier member in each of the plurality of second openings.