Abstract: A layered metal oxide field effect material forms a heterojunction from metal oxides with different band gaps, and defines a band gap difference (?E)?1 eV. Band bending is generated at the interface of the heterojunction, such that a potential barrier is formed on the side with the larger band gap and a triangular potential well is formed on the side with the smaller band gap, and under the induction of a gate electric field, a polarized charge is generated at the interface of the heterojunction, and a large number of carriers are accumulated. Therefore, the present layered metal oxide field effect material has high carrier mobility higher than 103 cm2/V·s, and overcomes the problem that the carrier mobility of a conventional metal oxide field effect material is low, it is required to fabricate the metal oxide field effect material into a crystal phase structure with a relatively high cost, and even that a substrate thereof with a crystal phase structure is required.

Abstract: A layered metal oxide field effect electrode includes multiple metal strips and layered metal oxide films. The band gap width of the first thin metal oxide film material is less than 3 eV; the band gap width of the second thin metal oxide film material is greater than 3 eV; the band gap width of the third thin metal oxide film material is less than 3 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the first thin metal oxide film material is greater than 1 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the third thin metal oxide film material is greater than 1 eV; and the thicknesses of the first thin metal oxide film, the second thin metal oxide film, and the third thin metal oxide film are each smaller than or equal to 10 nm. The layered metal oxide field effect electrode has the advantages of high light transmittance and a good field conduction performance.

Abstract: A layered metal oxide field effect electrode includes multiple metal strips and layered metal oxide films. The band gap width of the first thin metal oxide film material is less than 3 eV; the band gap width of the second thin metal oxide film material is greater than 3 eV; the band gap width of the third thin metal oxide film material is less than 3 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the first thin metal oxide film material is greater than 1 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the third thin metal oxide film material is greater than 1 eV; and the thicknesses of the first thin metal oxide film, the second thin metal oxide film, and the third thin metal oxide film are each smaller than or equal to 10 nm. The layered metal oxide field effect electrode has the advantages of high light transmittance and a good field conduction performance.

Abstract: A layered metal oxide field effect material forms a heterojunction from metal oxides with different band gaps, and defines a band gap difference (?E)?1 eV. Band bending is generated at the interface of the heterojunction, such that a potential barrier is formed on the side with the larger band gap and a triangular potential well is formed on the side with the smaller band gap, and under the induction of a gate electric field, a polarized charge is generated at the interface of the heterojunction, and a large number of carriers are accumulated. Therefore, the present layered metal oxide field effect material has high carrier mobility higher than 103 cm2/V·s, and overcomes the problem that the carrier mobility of a conventional metal oxide field effect material is low, it is required to fabricate the metal oxide field effect material into a crystal phase structure with a relatively high cost, and even that a substrate thereof with a crystal phase structure is required.

Abstract: A method for preparing a layered metal oxide field effect material includes depositing a first metal oxide, a core-layer metal, and a second metal oxide sequentially on the substrate by vacuum vapor deposition, the first metal oxide and the core-layer metal undergoing a redox reaction to form a first surface layer and a core-layer precursor on the substrate, and the core-layer precursor and the second metal oxide undergoing a redox reaction to form a core layer and a second surface layer; and the band gap of the metal oxide in the core layer is ?3 eV, the band gaps of the metal oxide in the first surface layer and the second surface layer are independently ?3 eV, and the difference between the band gap of the metal oxide in the core layer and the band gap of the metal oxide in the first surface layer is ?1 eV. The present preparation method has advantages of simple operation, a low production cost, a good film forming property, and the high carrier mobility of the product.

Abstract: A method for monitoring a main machine, a monitoring apparatus and a main machine are provided. The method for monitoring the main machine includes paging, by a monitoring apparatus, a main machine within an effective area, returning, by a main machine being paged, apparatus information of the main machine; determining at least one main machine as a monitored main machine according to the apparatus information returned by the at least one main machine; establishing a monitoring connection relationship with each monitored main machine; and monitoring an emergent event of the at least one monitored main machine or inquiring about a working status of the at least one monitored main machine by using the monitoring connection relationship established.