Patents by Inventor Dengke Wang

Dengke Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250101868
    Abstract: Disclosed are a visualization grouting device for coal and rock fissures and a test method, a test device including a visualization fissure grouting box body, a box body bracket, a grouting device and a monitoring device. A bottom plate is divided into four identical areas, rubber cushion blocks with different specifications are arranged to simulate different fissure widths and tortuosity, artificial protolith thin film is pasted inside, and a grouting hole and a plurality of pressure measuring holes are arranged in the center of the upper top plate. In the present disclosure, the grouting process of fissures under different grouting conditions, such as different fissure widths, roughness, grouting resistance and tortuosity of pore channels can be simulated, the grouting under different fissure conditions can be simultaneously simulated, and the differences of different grouting diffusion forms can be clearly and intuitively analyzed and compared through the visualization box body.
    Type: Application
    Filed: October 24, 2024
    Publication date: March 27, 2025
    Inventors: Dengke Wang, Haohang Feng, Jianping Wei, Lei Wang, Hongtu Zhang, Chuanqi Zhu, Le Wei, Banghua Yao, Bo Li, Leilei Si, Zhihui Wen, Xiangyu Xu, Yong Liu, Jian Zhang, Baobao Chen, Shaobo Li, Hewu Liu, Shuaibing Song, Hao Fan, Kun Zhang
  • Patent number: 11165031
    Abstract: A layered metal oxide field effect material forms a heterojunction from metal oxides with different band gaps, and defines a band gap difference (?E)?1 eV. Band bending is generated at the interface of the heterojunction, such that a potential barrier is formed on the side with the larger band gap and a triangular potential well is formed on the side with the smaller band gap, and under the induction of a gate electric field, a polarized charge is generated at the interface of the heterojunction, and a large number of carriers are accumulated. Therefore, the present layered metal oxide field effect material has high carrier mobility higher than 103 cm2/V·s, and overcomes the problem that the carrier mobility of a conventional metal oxide field effect material is low, it is required to fabricate the metal oxide field effect material into a crystal phase structure with a relatively high cost, and even that a substrate thereof with a crystal phase structure is required.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: November 2, 2021
    Assignee: YUNNAN UNIVERSITY
    Inventors: Zhenghong Lu, Tao Zhang, Dengke Wang
  • Patent number: 10615361
    Abstract: A layered metal oxide field effect electrode includes multiple metal strips and layered metal oxide films. The band gap width of the first thin metal oxide film material is less than 3 eV; the band gap width of the second thin metal oxide film material is greater than 3 eV; the band gap width of the third thin metal oxide film material is less than 3 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the first thin metal oxide film material is greater than 1 eV; the difference between the band gap width of the second thin metal oxide film material and the band gap width of the third thin metal oxide film material is greater than 1 eV; and the thicknesses of the first thin metal oxide film, the second thin metal oxide film, and the third thin metal oxide film are each smaller than or equal to 10 nm. The layered metal oxide field effect electrode has the advantages of high light transmittance and a good field conduction performance.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: April 7, 2020
    Assignee: Yunnan University
    Inventors: Zhenghong Lu, Tao Zhang, Dengke Wang
  • Patent number: 10475933
    Abstract: A method for preparing a layered metal oxide field effect material includes depositing a first metal oxide, a core-layer metal, and a second metal oxide sequentially on the substrate by vacuum vapor deposition, the first metal oxide and the core-layer metal undergoing a redox reaction to form a first surface layer and a core-layer precursor on the substrate, and the core-layer precursor and the second metal oxide undergoing a redox reaction to form a core layer and a second surface layer; and the band gap of the metal oxide in the core layer is ?3 eV, the band gaps of the metal oxide in the first surface layer and the second surface layer are independently ?3 eV, and the difference between the band gap of the metal oxide in the core layer and the band gap of the metal oxide in the first surface layer is ?1 eV. The present preparation method has advantages of simple operation, a low production cost, a good film forming property, and the high carrier mobility of the product.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: November 12, 2019
    Assignee: Yunnan University
    Inventors: Zhenghong Lu, Tao Zhang, Dengke Wang
  • Publication number: 20100302002
    Abstract: A method for monitoring a main machine, a monitoring apparatus and a main machine are provided. The method for monitoring the main machine includes paging, by a monitoring apparatus, a main machine within an effective area, returning, by a main machine being paged, apparatus information of the main machine; determining at least one main machine as a monitored main machine according to the apparatus information returned by the at least one main machine; establishing a monitoring connection relationship with each monitored main machine; and monitoring an emergent event of the at least one monitored main machine or inquiring about a working status of the at least one monitored main machine by using the monitoring connection relationship established.
    Type: Application
    Filed: August 2, 2010
    Publication date: December 2, 2010
    Applicant: Yulong Computer Telecommunication Technologies (Shenzhen) Co., Ltd.
    Inventors: Deying Guo, Jun Li, Wei Zhang, Penghui Yang, Jianrong Ye, Huaxing Chen, Zuohua Zhou, Dengke Wang, Chundong Fang, Yantao Zhao, Bijun Zhang