Patents by Inventor DENG-PING YIN

DENG-PING YIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stack MOM capacitor structure for CIS
    Patent number: 10062687
    Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, a capacitor on the interlayer dielectric layer, and a PN-junction diode in the semiconductor substrate and below the capacitor. The PN-junction diode includes a p-type ion implanted region and an n-well located below the p-type ion implanted region and completely surrounding the p-type ion implanted region. The PN-junction diode in the semiconductor substrate may prevent noise from entering the capacitor to improve the noise immunity of the semiconductor device.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: August 28, 2018
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Deng-Ping Yin
  • STACK MOM CAPACITOR STRUCTURE FOR CIS
    Publication number: 20160086940
    Abstract: A semiconductor device includes a semiconductor substrate, an interlayer dielectric layer on the semiconductor substrate, a capacitor on the interlayer dielectric layer, and a PN-junction diode in the semiconductor substrate and below the capacitor. The PN-junction diode includes a p-type ion implanted region and an n-well located below the p-type ion implanted region and completely surrounding the p-type ion implanted region. The PN-junction diode in the semiconductor substrate may prevent noise from entering the capacitor to improve the noise immunity of the semiconductor device.
    Type: Application
    Filed: September 9, 2015
    Publication date: March 24, 2016
    Inventor: DENG-PING YIN