Patents by Inventor Dengyong YU

Dengyong YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12046520
    Abstract: The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze.
    Type: Grant
    Filed: November 7, 2023
    Date of Patent: July 23, 2024
    Assignee: Zing Semiconductor Corporation
    Inventors: Gongbai Cao, Liying Liu, Chihhsin Lin, Dengyong Yu
  • Patent number: 11923254
    Abstract: The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: March 5, 2024
    Assignee: Zing Semiconductor Corporation
    Inventors: Gongbai Cao, Liying Liu, Chihhsin Lin, Dengyong Yu
  • Publication number: 20240071839
    Abstract: The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze.
    Type: Application
    Filed: November 7, 2023
    Publication date: February 29, 2024
    Applicant: Zing Semiconductor Corporation
    Inventors: Gongbai CAO, Liying LIU, Chihhsin LIN, Dengyong YU
  • Publication number: 20220115274
    Abstract: The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze.
    Type: Application
    Filed: January 29, 2021
    Publication date: April 14, 2022
    Applicant: Zing Semiconductor Corporation
    Inventors: Gongbai CAO, Liying LIU, Chihhsin LIN, Dengyong YU