Abstract: Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading chamber, a preheating chamber, intrinsic process chambers, doping process chambers and an unloading chamber that are linearly arranged in sequence, the chambers being isolated from each other by means of an isolating valve. At least two intrinsic process chambers are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process chamber is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating chamber comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.

Abstract: Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.

Abstract: The present invention belongs to the technical field of PECVD devices. Disclosed are a drooping cover plate and a PECVD device having the drooping cover plate. In the drooping cover plate of the present invention, a first insulating frame is arranged on a bottom plate frame, and a second insulating frame is arranged on the first insulating frame; the bottom plate frame is formed of several bottom plates connected to each other, a lower side face of each bottom plate is provided with an extension portion that is perpendicular to the lower side face of the bottom plate; the first insulating frame is formed of several first insulating plates joined together, and the second insulating frame is formed of several second insulating plates joined together; and several strip-shaped holes communicating an inner side and an outer side of the bottom plate frame are formed.

Abstract: The present application discloses a large-area dual-frequency heterojunction solar cell thin film deposition method and apparatus, where the large-area dual-frequency heterojunction solar cell thin film deposition method at least includes: placing a silicon wafer to be deposited in a process chamber of a flat-plate coupled chemical vapor deposition; introducing a process gas into the process chamber, the process gas including at least one of SiH4, H2, CO2, NO2, N2, O2, O3, Ar, and NH3; generating a plasma by exciting and dissociating of the process gas through a radio frequency power supply system fed into the process chamber; and transferring the plasma to the surface of the silicon wafer to be deposited under the electric field to form a silicon-based thin film or perform plasma interface treatment on the deposited silicon-based thin film.

Abstract: Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.

Abstract: The present application discloses a method for cleaning a process chamber and an application thereof. The method for cleaning a process chamber includes: (a) turning on a remote plasma system, exciting a clean-process gas into plasma, and supplying remote plasma to the process chamber; (b) after operation of the remote plasma system reaches a stable state, turning on a radio-frequency power supply system in the process chamber, re-exciting and enhancing the remote plasma positioned in the process chamber by the radio-frequency power supply system, and using both the remote plasma system and the radio-frequency power supply system for jointly acting and cleaning the process chamber during a period of cleaning time; (c) when the cleaning of the process chamber is completed, firstly turning off the radio-frequency power supply system in the process chamber; and (d) then turning off the remote plasma system.

Abstract: The present disclosure provides a structure and a method for solving parasitic plasma in a plasma processing apparatus, which belong to the field of plasma processing apparatus. In the structure, a first gas channel is in communication with a narrow-bore insulating tube and a second gas channel. The narrow-bore insulating tube is configured to feed a process gas into a gas distribution assembly. An on-off valve is disposed between the second gas channel and the first gas channel. The second gas channel is configured to feed a cleaning gas into the gas distribution assembly. Therefore, on the one hand, the on-off valve can be closed before the processing, and a cleaning gas with a preset pressure can be fed into the wide-bore insulating tube and the second gas channel, thereby forming a relatively high-pressure environment in the wide-bore insulating tube and the second gas channel.

Abstract: Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.

Abstract: An onsite steel rail laser processing engineering vehicle, including a laser processing power engineering vehicle and a laser processing cart, the laser processing power engineering vehicle is connected to the laser processing cart; the onsite steel rail laser processing engineering vehicle further comprises a transport mechanism disposed on the laser processing power engineering vehicle; through movement and rotation, the transport mechanism transports the laser processing cart into the laser processing power engineering vehicle or transports the laser processing cart out from the laser processing power engineering vehicle and places it on rails.

Abstract: The disclosure discloses a method for reinforcing a rail by laser and auxiliary heat source efficient hybrid cladding. The laser and the auxiliary heat source simultaneously apply on a region to be cladded of a rail surface. The laser serves as a main heat source to enable simultaneous and rapid fusion of an added metal powder and partial substrate material in the rail surface to form a molten pool. The auxiliary heat source moves with the laser heat source in the same direction at the same speed, and performs synchronous preheating and/or post-heating on the laser molten pool, the heat-affected zone and the surface layer of the rail substrate to reduce the temperature gradient, thereby reducing the cooling rate, and avoiding martensite transformation and cracking in the heat-affected zone.

Abstract: An onsite steel rail laser processing engineering vehicle, including a laser processing power engineering vehicle and a laser processing cart, the laser processing power engineering vehicle is connected to the laser processing cart; the onsite steel rail laser processing engineering vehicle further comprises a transport mechanism disposed on the laser processing power engineering vehicle; through movement and rotation, the transport mechanism transports the laser processing cart into the laser processing power engineering vehicle or transports the laser processing cart out from the laser processing power engineering vehicle and places it on rails.