Abstract: Various implementations described herein refer to a device having a cell structure with multiple transistors including active n-type transistors and active p-type transistors disposed together within a cell boundary. The active n-type transistors may have a first diffusion region formed within the cell boundary at a first end of the cell structure. The active p-type transistors may have a second diffusion region formed within the cell boundary at a second end of the cell structure. The active p-type transistors may have a vacated region cut-out from the second diffusion region, and/or the active n-type transistors may have a vacated region cut-out from the first diffusion region.

Abstract: Various implementations described herein refer to a method for providing a cell layout with a power grid distribution network. The method may include analyzing porosity of the cell layout to identify blocked tracks and unblocked tracks. The method may include marking the unblocked tracks as available sites for stitching power rails of the cell layout to the power grid distribution network. The method may include generating a porosity report for the cell layout, and the porosity report may list the available sites as modifiable to enhance power grid porosity of the cell layout.

Abstract: Various implementations described herein refer to a method for providing a cell layout with a power grid distribution network. The method may include analyzing porosity of the cell layout to identify blocked tracks and unblocked tracks. The method may include marking the unblocked tracks as available sites for stitching power rails of the cell layout to the power grid distribution network. The method may include generating a porosity report for the cell layout, and the porosity report may list the available sites as modifiable to enhance power grid porosity of the cell layout.

Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include a cell having a first region designated for a first type of implant and a second region designated for a second type of implant that is different than the first type of implant. The integrated circuit may include a first implant structure configured to implant the first region with the first type of implant such that the first region extends within a portion of the second region. The integrated circuit may include a second implant structure configured to implant the second region with the second type of implant such that the second region extends within a portion of the first region.

Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include a cell having a first region designated for a first type of implant and a second region designated for a second type of implant that is different than the first type of implant. The integrated circuit may include a first implant structure configured to implant the first region with the first type of implant such that the first region extends within a portion of the second region. The integrated circuit may include a second implant structure configured to implant the second region with the second type of implant such that the second region extends within a portion of the first region.