Abstract: A device for trapping gaseous compounds of refractory metals includes at least a vertically disposed elongated enclosure (1) in the form of a hollow cylindrical member (2), sealingly closed in its upper part via a cover (4), and having a hollow bottom (5) in its lower part. The enclosure is lined in the major part of the height of the member with a heat conductive lining (10) leaving within itself free vertical spaces from top to bottom; The enclosure includes a gas inlet opening (8) below the lower portion of the lining, a gas outlet opening (11) above the lining, a heater and heat insulation.

Abstract: A method and apparatus for cleaning the optical elements in an excimer laser in situ. A source of high pressure carbon dioxide gas is allowed to escape through a nozzle facing the surface of the optical elements. The escaping gas expands and cools sufficiently to form a carbon dioxide ice jet. The ice jet strikes the surface of the optical elements causing cleaning of the elements by abrasion. Carbon dioxide may be removed merely by evacuation and purging of the system. Thus the mirrors are cleaned without removing them.

Abstract: A process for depositing tungsten silicide films on a silicon substrate by chemical vapor deposition, comprises the steps of producing a silicon sub-fluoride by passing SiF.sub.4 over pieces of silicon heated in a tubular oven about 1200.degree.-1500.degree. K., mixing gaseous WF.sub.6 with the silicon sub-fluoride, and then immediately depositing the tungsten silicide films on said silicon substrate.

Abstract: A process and apparatus for treating waste products coming from the manufacture of electronic components. The effluent gases are aspirated by an inert vehicle gas, then intimately mixed with a preheated oxidizing gas, then remain in contact therewith at a sufficient temperature and for a sufficient period of time for the incineration, then the products of oxidation are cooled by thermal exchange to condensation, and the solid products of oxidation are collected and the residual gases washed, and there is realized a cascade of pressure drops along the gaseous current.

Abstract: The present invention concerns a process for the control in real time of the etching in a process for manufacturing electronic components of the type obtained by reacting ionic etching of wafers of silicon utilizing a plasma produced between two electrodes, wherein the gaseous species of the plasma are analyzed during the etching, at least one of the wafers of silicon being removable in situ from the influence of the plasma.The invention also concerns a reactor therefore, comprising a housing under vacuum 31 including at least one support electrode 34 and one electrode 35 connected to ground between which a plasma is produced, means for producing a vacuum, means for loading and unloading wafers, means for introducing etching gas, wherein the reactor comprises at least two locations 40 for wafers 33, means for withdrawing at least one location from the influence of the plasma 37, said means and the locations being movable with respect to one another, and means for analyzing gaseous species of the plasma.