Patents by Inventor Denis Camel
Denis Camel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10287703Abstract: A substrate characterised in that it is at least partially surface-coated with a coating containing at least one so-called “barrier” layer having silica and one or more material(s) X selected from among SiC, Si, Si3N4, in which layer the amount of X varies between 25-wt. % and 50.-wt. % in relation to the total weight of the barrier layer, the barrier layer being formed by grains of one or more materials X covered at least partially in a silica shell, and the barrier layer being in direct contact with the substrate.Type: GrantFiled: September 12, 2014Date of Patent: May 14, 2019Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Jean-Paul Garandet, Denis Camel, Béatrice Drevet, Nicolas Eustathopoulos, Charles Huguet, Johann Testard, Rayisa Voytovych
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Patent number: 10131999Abstract: A method for producing a silicon ingot, provided with symmetrical grain boundaries, including at least steps made of: (i) providing crucible with longitudinal axis, bottom of which includes a paving formed from monocrystalline cuboid silicon seeds with a square or rectangular base and arranged contiguously, the paving, when viewed according to axis, being in shape of a grid of orthogonal directions (x) and (y) parallel to edges of seeds; and (ii) proceeding with controlled solidification of silicon by growth on seeds in a growth direction collinear to axis; wherein paving in step (i) is produced from identical silicon seeds, with two seeds contiguous in direction (x) being images of each other by turning axis (y) and two seeds contiguous in direction (y) being images of each other by turning axis (x), and misorientation 2? between crystalline arrays of two contiguous seeds being greater than 4°.Type: GrantFiled: May 26, 2014Date of Patent: November 20, 2018Assignee: COMMISSARIAT À L'ENERGLE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Gautier Fortin, Vanessa Amaral De Oliveira, Denis Camel, Etienne Pihan
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Patent number: 10125430Abstract: A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.Type: GrantFiled: May 26, 2014Date of Patent: November 13, 2018Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Etienne Pihan, Vanessa Amaral De Oliveira, Denis Camel, Denis Chavrier, Gautier Fortin, Anis Jouini, Benoit Marie, Nelly Plassat
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Patent number: 10023972Abstract: A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.Type: GrantFiled: September 12, 2014Date of Patent: July 17, 2018Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Jean-Paul Garandet, Denis Camel, Béatrice Drevet, Nicolas Eustathopoulos, Charles Huguet, Johann Testard, Rayisa Voytovych
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Patent number: 9945046Abstract: The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance. The second portion is designed to receive a seed for fabrication of the crystalline material. The bottom and side wall are at least partially formed by a tightly sealed part including at least one indentation participating in defining said first and second portions. The first portion is covered by a first anti-adherent layer having an additional first thermal resistance. The second portion may be covered by a second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance.Type: GrantFiled: September 3, 2012Date of Patent: April 17, 2018Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Fabrice Coustier, Denis Camel, Anis Jouini, Etienne Pihan
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Publication number: 20160230305Abstract: A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.Type: ApplicationFiled: September 12, 2014Publication date: August 11, 2016Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Jean-Paul GARANDET, Denis CAMEL, Béatrice DREVET, Nicolas EUSTATHOPOULOS, Charles HUGUET, Johann TESTARD, Rayisa VOYTOVYCH
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Publication number: 20160222542Abstract: A substrate characterised in that it is at least partially surface-coated with a coating containing at least one so-called “barrier” layer having silica and one or more material(s) X selected from among SiC, Si, Si3N4, in which layer the amount of X varies between 25-wt. % and 50.-wt. % in relation to the total weight of the barrier layer, the barrier layer being formed by grains of one or more materials X covered at least partially in a silica shell, and the barrier layer being in direct contact with the substrate.Type: ApplicationFiled: September 12, 2014Publication date: August 4, 2016Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Jean-Paul GARANDET, Denis CAMEL, Béatrice DREVET, Nicolas EUSTATHOPOULOS, Charles HUGUET, Johann TESTARD, Rayisa VOYTOVYCH
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Publication number: 20160122897Abstract: A method for producing a silicon ingot, provided with symmetrical grain boundaries, including at least steps made of: (i) providing crucible with longitudinal axis, bottom of which includes a paving formed from monocrystalline cuboid silicon seeds with a square or rectangular base and arranged contiguously, the paving, when viewed according to axis, being in shape of a grid of orthogonal directions (x) and (y) parallel to edges of seeds; and (ii) proceeding with controlled solidification of silicon by growth on seeds in a growth direction collinear to axis; wherein paving in step (i) is produced from identical silicon seeds, with two seeds contiguous in direction (x) being images of each other by turning axis (y) and two seeds contiguous in direction (y) being images of each other by turning axis (x), and misorientation 2? between crystalline arrays of two contiguous seeds being greater than 4°.Type: ApplicationFiled: May 26, 2014Publication date: May 5, 2016Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Gautier FORTIN, Vanessa AMARAL DE OLIVEIRA, Denis CAMEL, Etienne PIHAN
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Publication number: 20160108548Abstract: A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterised in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.Type: ApplicationFiled: May 26, 2014Publication date: April 21, 2016Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Etienne PIHAN, Vanessa AMARAL DE OLIVEIRA, Denis CAMEL, Denis CHAVRIER, Gautier FORTIN, Anis JOUINI, Benoit MARIE, Nelly PLASSAT
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Patent number: 9303929Abstract: Heat exchanger (1) for a system for solidification and/or for crystallization of a semiconductor material, comprising a first member (2) and a second member (3), the first and second members being movable with respect to each other, characterized in that the first member comprises a first pattern of relief (21) and the second member comprises a second pattern of relief (31), the first pattern of relief being designed to cooperate with the second pattern of relief.Type: GrantFiled: November 29, 2011Date of Patent: April 5, 2016Assignee: Commissariat a L'energie Atomique et aux Energies AlternativesInventors: Etienne Pihan, Denis Camel, Nicolas Coudurier
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Patent number: 9145339Abstract: The present invention relates to novel materials intended for being contacted with liquid silicon and having a multilayer architecture, the intermediate layer of which is formed by a silicon carbide matrix containing at least one carbon nodule. The invention also relates to the method for preparing said materials.Type: GrantFiled: September 3, 2009Date of Patent: September 29, 2015Assignees: Commissariat a l'Energie Atomique et Energies Alternatives, Center National de la Recherche ScientifiqueInventors: Jean-Paul Garandet, Denis Camel, Béatrice Drevet, Nicolas Eustathopoulos, Rana Israel
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Patent number: 8956481Abstract: The present invention relates to a method of assembling carbon parts using a braze based on silicon carbide. The invention also relates to the parts assembled using such a method.Type: GrantFiled: September 3, 2009Date of Patent: February 17, 2015Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, Institut National Polytechnique de GrenobleInventors: Jean-Paul Garandet, Denis Camel, Beatrice Drevet, Nicolas Eustathopoulos, Rana Israel
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Publication number: 20140224172Abstract: The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance. The second portion is designed to receive a seed for fabrication of the crystalline material. The bottom and side wall are at least partially formed by a tightly sealed part including at least one indentation participating in defining said first and second portions. The first portion is covered by a first anti-adherent layer having an additional first thermal resistance. The second portion may be covered by a second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance.Type: ApplicationFiled: September 3, 2012Publication date: August 14, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Fabrice Coustier, Denis Camel, Anis Jouini, Etienne Pihan
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Publication number: 20130239370Abstract: Heat exchanger (1) for a system for solidification and/or for crystallization of a semiconductor material, comprising a first member (2) and a second member (3), the first and second members being movable with respect to each other, characterized in that the first member comprises a first pattern of relief (21) and the second member comprises a second pattern of relief (31), the first pattern of relief being designed to cooperate with the second pattern of relief.Type: ApplicationFiled: November 29, 2011Publication date: September 19, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Etienne Pihan, Denis Camel, Nicolas Coudurier
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Patent number: 8172944Abstract: The device for producing a block of crystalline material from a bath of molten material comprises a crucible having a bottom and heat extraction means arranged under the crucible. It also comprises means for modulating the thermal conductivity fitted between the bottom of the crucible and the heat extraction means. The means for modulating the thermal conductivity comprise a plurality of plates made from thermally conducting material of low emissivity, parallel to the bottom of the crucible, and means for moving said plates closer to and away from one another.Type: GrantFiled: July 3, 2008Date of Patent: May 8, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Florence Servant, Denis Camel, Benoit Marie, Damien Ponthenier
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Publication number: 20120040139Abstract: The present invention relates to novel materials intended for being contacted with liquid silicon and having a multilayer architecture, the intermediate layer of which is formed by a silicon carbide matrix containing at least one carbon nodule. The invention also relates to the method for preparing said materials.Type: ApplicationFiled: September 3, 2009Publication date: February 16, 2012Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Jean-Paul Garandet, Denis Camel, Beatrice Drevet, Nicolas Eustathopoulos, Rana Israel
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Publication number: 20110229711Abstract: The present invention relates to a method of assembling carbon parts using a braze based on silicon carbide. The invention also relates to the parts assembled using such a method.Type: ApplicationFiled: September 3, 2009Publication date: September 22, 2011Applicants: COMMISSARIAT AT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, INSTITUT NATIONAL POLYTECHNIQUE DE GRENOBLEInventors: Jean-Paul Garandet, Denis Camel, Béatrice Drevet, Nicolas Eustathopoulos, Rana Israel
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Publication number: 20110212630Abstract: The invention relates to a method for preparing a self-supporting crystallized silicon thin film having a grain size of more than 1 mm. The invention also relates to the use of said method for preparing self-supporting silicon bands and to the bands thus obtained.Type: ApplicationFiled: September 3, 2009Publication date: September 1, 2011Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Jean-Paul Garandet, Denis Camel, Béatrice Drevet
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Patent number: 7799306Abstract: The method enables metallurgical silicon to be purified by directional solidification to obtain solar or photovoltaic grade silicon. A crystallization step uses at least one silicon seed, preference of solar grade or even microelectronic grade, having for example a purity substantially equal to or greater than a predetermined purity of the solar-grade silicon. The silicon seed which covers the bottom of the crucible can come from a previous crystallization or be formed by a silicon wafer. The use of a single-crystal or textured multi-crystal seed enables crystallographic orientation of the solar-grade silicon. An intermediate layer of solid metallurgical silicon can be arranged on the silicon seed and a metallurgical silicon feedstock is arranged on the intermediate layer.Type: GrantFiled: November 2, 2007Date of Patent: September 21, 2010Assignee: Commissariat a l'Energie AtomiqueInventors: Florence Servant, Denis Camel, Beatrice Drevet
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Publication number: 20100171232Abstract: A method for semiconductor solidification which includes steps for: forming a bath of molten semiconductor from a first charge of semiconductor which includes dopants, solidification of the molten semiconductor, and which in addition includes, during solidification, the implementation of one or more steps for the addition of supplementary charges of semiconductor, which also contains dopants, to the molten semiconductor bath.Type: ApplicationFiled: December 23, 2009Publication date: July 8, 2010Applicant: COMMISSARIAT A L' ENERGIE ATOMIQUEInventors: Florence Servant, Denis Camel