Patents by Inventor Denis Flandre

Denis Flandre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230296455
    Abstract: A strain sensor is based on a self-biasing reference circuit that reaches an operating state that, at least at first order, is at least supply-voltage independent. The strain sensor provides an output signal that is defined by the operating state of the self-biasing reference circuit. At least one component in the self-biasing reference circuit has an electrical characteristic that depends on a strain to which the at least one component is subjected. This makes that the operating state of the self-biasing reference circuit depends on the strain. As a result, the output signal of the strain sensor varies as a function of the strain to which the at least one component is subjected.
    Type: Application
    Filed: July 30, 2021
    Publication date: September 21, 2023
    Inventors: Nicolas ROISIN, Denis FLANDRE, Nicolas ANDRE, Delhaye THIBAULT
  • Publication number: 20230208188
    Abstract: In an energy harvesting system, a power extraction circuit extracts electrical power from an environmental power source susceptible of providing a level of power that fluctuates. An electrical power storage device stores the electrical power extracted from the environmental power source by the power extraction circuit. A sensing circuit provides an indication of a level of power that the power extraction circuit can extract from the environmental power source. A controlled switch circuit electrically decouples the power extraction circuit from the electrical power storage device when the indication indicates that the level of power that the power extraction circuit can extract from the environmental power source is insufficient for the power extraction circuit to charge the electrical power storage device. This prevents leakage of harvested power.
    Type: Application
    Filed: May 31, 2021
    Publication date: June 29, 2023
    Inventors: Pengcheng XU, David BOL, Denis FLANDRE
  • Patent number: 10953238
    Abstract: This invention provides for a dermal repair system including a dermal repair device which is configured to be placed on the skin of a user. The dermal repair device is in the form of a removable silicone sheet which can be securely fixed in place and re-used after cleaning etc. The silicone sheet includes sheet sections and a housing section into which a rechargeable control unit can removably be inserted. Waveguides in the form of a dimple teardrop pattern are provided for directing radiation or light to distal ends of the sheet. The control unit includes a low-level radiation or light source from which radiation or light is directed along the sheet for a therapy regimen to treat closed wounds and scars, such as, C-section and breast surgery closed wounds and scars to improve healing and scar appearance. The system further comprises a recharging station configured for recharging the control unit.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: March 23, 2021
    Assignee: ALVALUX MEDICAL
    Inventors: Michel Alvarez, Denis Flandre
  • Patent number: 10953240
    Abstract: Ocular devices are provided for placement in the upper fornix of the eye and having a body that encompasses a low-level light source, an energy source, a microcontroller, and an antenna for delivering a programmable, fade in-out, light therapy regimen to treat neurological and ophthalmic diseases and disorders. In one embodiment the ocular device delivers a programmable green light therapy to reduce elevated intraocular pressure (IOP) and retinal hypoxia during the nocturnal period, that is, when these risk factors are at their highest level especially in glaucoma, age-related macular degeneration and diabetic retinopathy patients.
    Type: Grant
    Filed: December 5, 2016
    Date of Patent: March 23, 2021
    Assignee: ALVALUX MEDICAL
    Inventors: Michel Alvarez, Denis Flandre
  • Publication number: 20190076669
    Abstract: This invention provides for a dermal repair system including a dermal repair device which is configured to be placed on the skin of a user. The dermal repair device is in the form of a removable silicone sheet which can be securely fixed in place and re-used after cleaning etc. The silicone sheet includes sheet sections and a housing section into which a rechargeable control unit can removably be inserted. Waveguides in the form of a dimple teardrop pattern are provided for directing radiation or light to distal ends of the sheet. The control unit includes a low-level radiation or light source from which radiation or light is directed along the sheet for a therapy regimen to treat closed wounds and scars, such as, C-section and breast surgery closed wounds and scars to improve healing and scar appearance. The system further comprises a recharging station configured for recharging the control unit.
    Type: Application
    Filed: March 27, 2017
    Publication date: March 14, 2019
    Inventors: MICHEL ALVAREZ, DENIS FLANDRE
  • Publication number: 20180264284
    Abstract: Ocular devices are provided for placement in the upper fornix of the eye and having a body that encompasses a low-level light source, an energy source, a microcontroller, and an antenna for delivering a programmable, fade in-out, light therapy regimen to treat neurological and ophthalmic diseases and disorders. In one embodiment the ocular device delivers a programmable green light therapy to reduce elevated intraocular pressure (IOP) and retinal hypoxia during the nocturnal period, that is, when these risk factors are at their highest level especially in glaucoma, age-related macular degeneration and diabetic retinopathy patients.
    Type: Application
    Filed: December 5, 2016
    Publication date: September 20, 2018
    Inventors: MICHEL ALVAREZ, DENIS FLANDRE
  • Patent number: 8391081
    Abstract: A memory device is provided comprising a transistor having a floating body positioned between source and drain regions, the floating body being sandwiched between first and second insulated gates each comprising a gate electrode. A control circuit is arranged to program the state of said floating body to have an accumulation or depletion of majority carriers by applying one of first and second voltage levels between the first gate and at least one of the source and drain regions, and to retain the programmed state of said floating body by applying a third voltage level to the second gate. The voltages are switched over a time duration shorter than 100 ns.
    Type: Grant
    Filed: January 5, 2009
    Date of Patent: March 5, 2013
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Maryline Bawedin, Sorin Ioan Cristoloveanu, Denis Flandre, Christian Renaux, André Crahay
  • Patent number: 8294492
    Abstract: An ultra-low-power transconductance device is provided, (FIG. 1b, FIG. 1c), comprising a series connection of a transistor of a first channel type (A) and a transistor of a second channel type (B), the first channel type having a different polarity than the second channel type. The transistors each have a source, a drain and a gate. The source of the transistor of the first channel type (A) is coupled with the source of the transistor of the second channel type (B) and the drain of the transistor of the first channel type (A) is coupled with the gate of the transistor of the second channel type (B).
    Type: Grant
    Filed: April 29, 2008
    Date of Patent: October 23, 2012
    Assignee: Universite Catholique de Louvain
    Inventors: David Bol, Denis Flandre, Jean-Didier Legat
  • Patent number: 7943394
    Abstract: The present invention provides a method for capacitive detection of the presence of target sample on a substrate, which comprises the steps of: binding a target sample to selective binding sites on the substrate, the target sample being directly or indirectly labeled with conductive labels, and sensing the presence of the bound conductive labels to a binding site to thereby determine the presence of the target sample. The sensing step is carried out by a capacitive detection of the presence of the conductive labels. The present invention also provides a capacitive sensor device for determining the presence of a target sample. Conductive labels are directly or indirectly couplable to the target sample.
    Type: Grant
    Filed: June 24, 2003
    Date of Patent: May 17, 2011
    Assignee: Université Catholique de Louvain
    Inventors: Denis Flandre, Luis Moreno Hagelsieb, Rémi Pampin, David Bourgeois, José Remacle, Pierre-Emmannuel Lobert
  • Publication number: 20110019488
    Abstract: A memory device is provided comprising a transistor having a floating body positioned between source and drain regions, the floating body being sandwiched between first and second insulated gates each comprising a gate electrode. A control circuit is arranged to program the state of said floating body to have an accumulation or depletion of majority carriers by applying one of first and second voltage levels between the first gate and at least one of the source and drain regions, and to retain the programmed state of said floating body by applying a third voltage level to the second gate. The voltages are switched over a time duration shorter than 100 ns.
    Type: Application
    Filed: January 5, 2009
    Publication date: January 27, 2011
    Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Maryline Bawedin, Sorin Ioan Cristoloveanu, Denis Flandre, Christian Renaux, Andre Crahay
  • Publication number: 20100308980
    Abstract: A sensing network is described, consisting of a multiplexing reader and one or more sensor pairs, each sensor pair comprising a transponder and a dedicated reader, dedicated to that transponder, each transponder having a sensor. Each sensor pair is able to wirelessly interface and power both capacitive and resistive sensors at a short distance with high efficiency. By providing a dedicated reader for each transponder, each link can be optimized and there is no need for the dedicated reader to distinguish between signals from other transponders. The transponder generates an analog signal directly using a sensor or analog memory value and sends it by modulation to the dedicated reader. So, the dedicated readers do not need to have circuitry to demodulate a digital signal or ID code. The transponder includes the sensors and their electronic circuits and can be optionally remotely powered by the dedicated reader through the wireless link. The expected consumption of the dedicated reader can be lower than 200 ?W.
    Type: Application
    Filed: January 22, 2009
    Publication date: December 9, 2010
    Inventors: Geoffroy Pascal M. Gosset, Denis Flandre, Gilles Delmee, Bertrand Rue
  • Publication number: 20100134149
    Abstract: An ultra-low-power transconductance device is provided, (FIG. 1b, FIG. 1c), comprising a series connection of a transistor of a first channel type (A) and a transistor of a second channel type (B), the first channel type having a different polarity than the second channel type. The transistors each have a source, a drain and a gate. The source of the transistor of the first channel type (A) is coupled with the source of the transistor of the second channel type (B) and the drain of the transistor of the first channel type (A) is coupled with the gate of the transistor of the second channel type (B).
    Type: Application
    Filed: April 29, 2008
    Publication date: June 3, 2010
    Inventors: David Bol, Denis Flandre, Jean-Didier Legat
  • Publication number: 20090273356
    Abstract: The present invention provides an electronic transducer (10) and a method for detecting and/or characterizing target materials or physico-chemical stimuli in an external medium (8) using the electronic transducer (10). The electronic transducer (10) comprises a sensing element (3) featuring a variable conductance when exposed to a stimulus from the external medium and a first and second electrode (5a, 5b) spaced apart on or in a sensing material surface of a substrate, the sensing element being provided in or on the substrate and being located between the first and the second electrodes (5a, 5b) forming a pair of sensing electrodes for sensing a change in conductance of the sensing element (3) in a direction substantially parallel to the sensing material surface, at least one of the sensing electrodes (5a, 5b) being electrically insulated from the sensing element (3) by a dielectric layer (4), so as to be capacitively coupled to the sensing element (3).
    Type: Application
    Filed: September 10, 2007
    Publication date: November 5, 2009
    Inventors: Rémi Sébastien Pampin, Denis Flandre, Luis Moreno-Hagelsieb, Boris Foultier, José Remacle
  • Publication number: 20050227373
    Abstract: The present invention provides a method for capacitive detection of the presence of target sample on a substrate, which comprises the steps of: binding a target sample to selective binding sites on the substrate, the target sample being directly or indirectly labeled with conductive labels, and sensing the presence of the bound conductive labels to a binding site to thereby determine the presence of the target sample. The sensing step is carried out by a capacitive detection of the presence of the conductive labels. The present invention also provides a capacitive sensor device for determining the presence of a target sample. Conductive labels are directly or indirectly couplable to the target sample.
    Type: Application
    Filed: June 24, 2003
    Publication date: October 13, 2005
    Inventors: Denis Flandre, Luis Moreno, Remi Pampin, David Bourgeois, Jose Remacle, Pierre-Emmannuel Lobert
  • Patent number: 6870229
    Abstract: The present invention relates to an ultra-low power (ULP) MOS diode. The diode has a first and a second terminal. It comprises an n-MOS transistor having a channel, a first N+ doped diffusion region at one extremity of the channel and a second N+ diffusion region at the other extremity of the channel, and a p-MOS transistor having a channel and a first P+ doped diffusion region at one extremity of the channel and a second P+ diffusion region at the other extremity of the channel. The first N+ diffusion region of the n-MOS transistor is coupled to the first P+ diffusion region of the p-MOS transistor, the gate of the n-MOS transistor is coupled to the second P+ diffusion region of the p-MOS transistor, and the gate of the p-MOS transistor is coupled to the second N+ diffusion region of the n-MOS transistor.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: March 22, 2005
    Assignee: Universite Catholique de Louvain
    Inventors: Vincent Dessard, Stéphane Adriaensen, Denis Flandre, David Levacq
  • Patent number: 6714079
    Abstract: A differential amplifier is described comprising an input branch for receiving differential and common mode input signal components; an output branch providing differential and common mode output signal components; and the differential amplifier being adapted to set a relationship between the magnitude of the common mode output signal component level of the amplifier with respect to the magnitude of the common mode input signal component level to the input stage so that the common mode output signal component level intrinsically follows the common mode input signal component level as a common mode follower without using feedback control of the common mode output signal component. Also an asymmetrical amplifier is described which may be advantageously used as a component of the differential amplifier.
    Type: Grant
    Filed: September 23, 2002
    Date of Patent: March 30, 2004
    Assignee: Universite Catholique de Louvain
    Inventors: Vincent Dessard, Denis Flandre
  • Publication number: 20040026760
    Abstract: Ultra-low power basic blocks and their uses The present invention relates to ultra-low power (ULP) electronic circuits which do not dissipate more than 10 &mgr;W, preferably not more than 1 &mgr;W. An ultra-low power device comprising a series connection of an n-MOS transistor and a p-MOS transistor each having a source and a drain, whereby the source of the n-MOS transistor is coupled with the source of the p-MOS transistor is provided. Both transistors are such that the absolute values of their threshold voltages are different, and that the absolute value of the relative difference of both threshold voltages is between 0.9 and 1.3 Volts. Each of the transistors in the ultra-low power device having at least one gate, these gates may be coupled together to form a common gate. Different applications of these basic blocks are given, such as ULP reference voltage, a ULP level shifter, a ULP voltage multiplier, a ULP OTA. Also a new diode is described.
    Type: Application
    Filed: June 23, 2003
    Publication date: February 12, 2004
    Inventors: Vincent Dessard, Stephane Adriaensen, Denis Flandre, David Levacq