Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for estimating the lifetime or remaining lifetime of an electromechanical systems (EMS) device. In one aspect, a parameter of the device, such as a release or actuation voltage, is measured. The parameter measurement is used in conjunction with a model of the aging of the device according to the measured parameter to determine an estimated remaining lifetime of the device.

Abstract: The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.

Abstract: The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 ?/minute or less.

Abstract: Methods are provided for removing edge beads from spin-on films. A spin-on film is removed from a region of a surface of a spin-coated substrate adjacent to an edge of the surface by spinning the spin-coated substrate, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the spin-on film in the region as the substrate spins. In another aspect of the invention, a film is formed on a surface of a substrate by dispensing a liquid composition onto the surface, spinning the substrate to distribute the liquid composition to form a substantially uniform film on the surface, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the film in a region of the surface adjacent to an edge of the surface as the substrate spins. The film may include an alkoxysilane and a low volatility solvent. The fluid may consists essentially of liquid carbon dioxide.

Abstract: A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).

Abstract: Methods are provided for removing edge beads from spin-on films. A spin-on film is removed from a region of a surface of a spin-coated substrate adjacent to an edge of the surface by spinning the spin-coated substrate, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the spin-on film in the region as the substrate spins. In another aspect of the invention, a film is formed on a surface of a substrate by dispensing a liquid composition onto the surface, spinning the substrate to distribute the liquid composition to form a substantially uniform film on the surface, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the film in a region of the surface adjacent to an edge of the surface as the substrate spins. The film may include an alkoxysilane and a low volatility solvent. The fluid may consists essentially of liquid carbon dioxide.

Abstract: A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).

Abstract: Methods are provided for removing edge beads from spin-on films. A spin-on film is removed from a region of a surface of a spin-coated substrate adjacent to an edge of the surface by spinning the spin-coated substrate, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the spin-on film in the region as the substrate spins. In another aspect of the invention, a film is formed on a surface of a substrate by dispensing a liquid composition onto the surface, spinning the substrate to distribute the liquid composition to form a substantially uniform film on the surface, expanding a fluid through a nozzle to form a cryogenic aerosol stream, and directing the cryogenic aerosol stream against the film in a region of the surface adjacent to an edge of the surface as the substrate spins. The film may include an alkoxysilane and a low volatility solvent. The fluid may consists essentially of liquid carbon dioxide.

Abstract: An electronic device comprises a substrate with a trench having a lower portion and a top portion. The lower portion of the trench is filled with a cured spin-on compound, while the top portion is filled with a chemical vapor-deposited compound. Preferably, the chemical vapor-deposited compound has a surface that is substantially coplanar with the surface of the substrate. Particularly preferred methods of fabricating such devices include a step in which a trench is formed in the substrate, and in which a first compound is deposited in the trench by spin-on deposition. The first compound is partially removed from the trench to a level below the surface of the substrate, and in a further step, a second compound is deposited onto the upper surface of the first compound by chemical vapor deposition.

Abstract: A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention.

Abstract: A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention.

Abstract: A process for forming a nanoporous dielectric silica coating on a surface of a substrate. The process includes spin-depositing alkoxysilane composition onto a surface of a substrate; spin depositing a surface hydrophobizing agent or a solvent onto an edge portion of the substrate to thereby remove the alkoxysilane composition from that area; and then curing the alkoxysilane composition to form a nanoporous dielectric silica coating. In another embodiment, an alkoxysilane composition layer is deposited onto a surface of a substrate. Then a solvent for the alkoxysilane substantially removes a portion of the alkoxysilane layer on the edge portion of the surface. This results in a transfer or cascading of a quantity of the alkoxysilane from a region adjacent to the edge portion to form a relatively thinner layer of the alkoxysilane onto the edge portion of the substrate surface. Then the relatively thinner alkoxysilane layer is removed prior to curing the alkoxysilane.