Abstract: Embodiments of the invention provide a method and apparatus that enables plasma etching of high aspect ratio features. In one embodiment, a method for etching is provided that includes providing a substrate having a patterned mask disposed on a silicon layer in an etch reactor, providing a gas mixture of the reactor, maintaining a plasma formed from the gas mixture, wherein bias power and RF power provided the reactor are pulsed, and etching the silicon layer in the presence of the plasma.

Abstract: The present invention generally is a cathode suitable for use in high temperature plasma etch applications. In one embodiment, the cathode includes a ceramic electrostatic chuck secured to a base. The base has cooling conduits formed therein. A rigid support ring is disposed between the chuck and the base, thereby maintaining the chuck and the base in a spaced-apart relation.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.