Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

Abstract: Apparatus and methods for calibrating a height-adjustable edge ring are described herein. In one example, a calibration jig for positioning an edge ring relative to a reference surface is provided that includes a transparent plate, a plurality of sensors coupled to a first side of the transparent plate, and a plurality of contact pads coupled to an opposing second side of the transparent plate.

Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a substrate support assembly includes a height-adjustable edge ring, and the substrate support assembly is located within a process chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators to adjust the height of the edge ring via one or more push pins. The height-adjustable edge ring can be used to compensate for erosion of the edge ring over time. In addition, the height-adjustable edge ring can be removed from the process chamber via a slit valve opening without venting and opening the process chamber. The height-adjustable edge ring can be tilted by the one or more actuators in order to improve azimuthal uniformity at the edge of the substrate.

Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

Abstract: Aspects of the present disclosure generally relate to methods and apparatuses for adjusting an edge ring position, and for removing or replacing one or more components of a process kit of a process chamber. The process kit includes one or more of an edge ring, a support ring, a sliding ring, and other consumable or degradable components.

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

Abstract: Aspects of the present disclosure generally relate to methods and apparatuses for adjusting an edge ring position, and for removing or replacing one or more components of a process kit of a process chamber. The process kit includes one or more of an edge ring, a support ring, a sliding ring, and other consumable or degradable components.

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.

Abstract: Implementations described herein provide a cooling base and a substrate support assembly having the same. In one example, a cooling base is provided that includes a body coupled to a cap. A plurality cooling channels are disposed in the body and bounded on at least one side by the cap. The plurality cooling channels have a polar array of spirals.

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The adjustable tuning ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the adjustable tuning ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component varies.

Abstract: Apparatus and methods for calibrating a height-adjustable edge ring are described herein. In one example, a calibration jig for positioning an edge ring relative to a reference surface is provided that includes a transparent plate, a plurality of sensors coupled to a first side of the transparent plate, and a plurality of contact pads coupled to an opposing second side of the transparent plate.

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.

Abstract: Embodiments of the present disclosure generally relate to methods and related process equipment for forming structures on substrates, such as etching high aspect ratio structures within one or more layers formed over a substrate. The methods and related equipment described herein can improve the formation of the structures on substrates by controlling the curvature of the plasma-sheath boundary near the periphery of the substrate, for example, by generating a substantially flat plasma-sheath boundary over the entire substrate (i.e., center to edge). The methods and related equipment described below can provide control over the curvature of the plasma-sheath boundary, including generation of the flat plasma-sheath boundary by applying RF power to an edge ring surrounding the substrate using a separate and independent RF power source.

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.