Abstract: The invention relates to a nanofiber fabrication method comprising nanofiber growth from a catalyst zone, furthermore comprising the following steps: producing at least one micropattern (11) on the surface of a substrate (1); producing a catalyst zone (50) on the surface of said micropattern; nanofiber growth from the catalyst zone, characterized in that the micropattern (11) comprises a base, at least partially convergent side walls and an upper face, said base being covered with a so-called “poison” layer (4) where no nanofiber growth catalysis effect can take place, the so-called “poison” layer not being present on said upper face; the base being covered with a catalyst layer (5) on the surface of the so-called “poison” layer; the thickness of the “poison” layer and the thickness of the catalyst layer being such that the nanofibers cannot grow either on the side walls or on the base of the micropatterns constructed beforehand.

Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.

Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.

Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.

Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.

Abstract: A method for correcting astigmatism of an electronic optical column of an electron emission spectromicroscope, comprising the steps of: forming a reference structure on a surface of a sample comprising a structure of interest to be imaged, imaging the reference structure by the spectromicroscope with secondary electrons and with core level photoelectrons, eliminating astigmatism defects appearing during the imaging of the reference structure with secondary electrons and with core level photoelectrons, a material of the reference structure being chosen such that, during core level photoelectron imaging, the contrast C between the average intensity Ia of the material of the reference structure and the average intensity Ib of the material of the sample is such that: C = I a - I b I a + I b ? 0.2 .

Abstract: The invention relates to a nanofiber fabrication method comprising nanofiber growth from a catalyst zone, furthermore comprising the following steps: producing at least one micropattern (11) on the surface of a substrate (1); producing a catalyst zone (50) on the surface of said micropattern; nanofiber growth from the catalyst zone, characterized in that the micropattern (11) comprises a base, at least partially convergent side walls and an upper face, said base being covered with a so-called “poison” layer (4) where no nanofiber growth catalysis effect can take place, the so-called “poison” layer not being present on said upper face; the base being covered with a catalyst layer (5) on the surface of the so-called “poison” layer; the thickness of the “poison” layer and the thickness of the catalyst layer being such that the nanofibers cannot grow either on the side walls or on the base of the micropatterns constructed beforehand.

Abstract: A method for correcting astigmatism of an electronic optical column of an electron emission spectromicroscope, comprising the steps of: forming a reference structure on a surface of a sample comprising a structure of interest to be imaged, imaging the reference structure by the spectromicroscope with secondary electrons and with core level photoelectrons, eliminating astigmatism defects appearing during the imaging of the reference structure with secondary electrons and with core level photoelectrons, a material of the reference structure being chosen such that, during core level photoelectron imaging, the contrast C between the average intensity Ia of the material of the reference structure and the average intensity Ib of the material of the sample is such that: C = I a - I b I a + I b ? 0.2 .

Abstract: A method produces a microstructure comprising an island of material confined between two electrodes forming barriers, the island (30) of material having lateral flanks running parallel to and lateral flanks running perpendicular to the barriers, wherein the lateral flanks of the island are defined by etching of at least one layer (16), called the template layer, and the barriers are formed by damascening. The method includes (a) a first etching of the template layer using a first etching mask having at least one filiform part, and (b) a second etching of the template layer, subsequent to the first etching, using a second etching mask also having at least one filiform part, oriented in a direction forming a non-zero angle with a direction of orientation of the filiform part of the first mask, in the vicinity of the site of formation of the island.

Abstract: The invention relates to a method for producing a microstructure comprising an island (30) of material confined between two electrodes (32) forming barriers; the island of material having lateral flanks running parallel and perpendicular to the barriers, characterized in that the lateral flanks of the island are defined by etching of at least one layer (16), called the template layer, and the barriers are formed by damascening.