Patents by Inventor Denis Masliah

Denis Masliah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170187340
    Abstract: A power amplifier of the present invention comprises a first cascode including a MOSFET and a JFET and a first capacitor electrically connected between the source and the drain of the JFET. Two such power amplifiers in parallel form a differential power amplifier. In the differential amplifier a second capacitor can be electrically connected between the source and the drain of the second JFET. Another differential power amplifier comprises a first capacitor electrically connected between the gate of the first MOSFET and the source of the second MOSFET, and a second capacitor electrically connected between the gate of the second MOSFET and the source of the first MOSFET. Some of these differential power amplifiers also include capacitors electrically connected between the sources and the drains of the JFETs.
    Type: Application
    Filed: March 14, 2017
    Publication date: June 29, 2017
    Inventors: Christophe Boyavalle, Denis A. Masliah, Francis C. Huin
  • Publication number: 20170126179
    Abstract: A power amplifier of the present invention comprises a first cascode including a MOSFET and a JFET and a first capacitor electrically connected between the source and the drain of the JFET. Two such power amplifiers in parallel form a differential power amplifier. In the differential amplifier a second capacitor can be electrically connected between the source and the drain of the second JFET. Another differential power amplifier comprises a first capacitor electrically connected between the gate of the first MOSFET and the source of the second MOSFET, and a second capacitor electrically connected between the gate of the second MOSFET and the source of the first MOSFET. Some of these differential power amplifiers also include capacitors electrically connected between the sources and the drains of the JFETs.
    Type: Application
    Filed: November 2, 2015
    Publication date: May 4, 2017
    Inventors: Christophe Boyavalle, Denis A. Masliah, Francis C. Huin
  • Patent number: 9627374
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: April 18, 2017
    Assignee: ACCO
    Inventor: Denis A. Masliah
  • Patent number: 9621110
    Abstract: A power amplifier of the present invention comprises a first cascode including a MOSFET and a JFET and a first capacitor electrically connected between the source and the drain of the JFET. Two such power amplifiers in parallel form a differential power amplifier. In the differential amplifier a second capacitor can be electrically connected between the source and the drain of the second JFET. Another differential power amplifier comprises a first capacitor electrically connected between the gate of the first MOSFET and the source of the second MOSFET, and a second capacitor electrically connected between the gate of the second MOSFET and the source of the first MOSFET. Some of these differential power amplifiers also include capacitors electrically connected between the sources and the drains of the JFETs.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: April 11, 2017
    Assignee: ACCO
    Inventors: Christophe Boyavalle, Denis A. Masliah, Francis C. Huin
  • Publication number: 20160111417
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Application
    Filed: December 22, 2015
    Publication date: April 21, 2016
    Inventor: Denis A. Masliah
  • Patent number: 9240402
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: January 19, 2016
    Inventors: Denis A. Masliah, Alexandre G. Bracale
  • Publication number: 20150054038
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Application
    Filed: November 3, 2014
    Publication date: February 26, 2015
    Inventors: Denis A. Masliah, Alexandre G. Bracale
  • Patent number: 8928410
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: January 6, 2015
    Assignee: ACCO Semiconductor, Inc.
    Inventors: Alexandre G. Bracale, Denis A. Masliah
  • Patent number: 8785987
    Abstract: An IGFET device includes: —a semiconductor body having a major surface, —a source region of first conductivity type abutting the surface, —a drain region of the first conductivity-type abutting the surface and spaced from the source region with a channel therefrom, —an active gate overlying the channel and insulated from the channel by a first dielectric material forming the gate oxide of the IGFET device, —a dummy gate positioned between the active gate and the drain and insulated from the active gate by a second dielectric material so that a capacitance is formed between the active gate and the dummy gate, and insulated from the drain region by the gate oxide, wherein the active gate and the dummy gate are forming the electrodes of the capacitance substantially perpendicular to the surface.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: July 22, 2014
    Assignee: Acco
    Inventor: Denis Masliah
  • Patent number: 8731485
    Abstract: RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: May 20, 2014
    Assignee: Acco Semiconductor, Inc.
    Inventor: Denis A. Masliah
  • Publication number: 20130303093
    Abstract: RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.
    Type: Application
    Filed: July 19, 2013
    Publication date: November 14, 2013
    Applicant: ACCO Semiconductor, Inc.
    Inventor: Denis A. Masliah
  • Publication number: 20130248945
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 26, 2013
    Inventors: Alexandre G. Bracale, Denis A. Masliah
  • Patent number: 8532584
    Abstract: RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: September 10, 2013
    Assignee: ACCO Semiconductor, Inc.
    Inventor: Denis A. Masliah
  • Patent number: 8400222
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Grant
    Filed: April 10, 2012
    Date of Patent: March 19, 2013
    Assignee: ACCO Semiconductor, Inc.
    Inventors: Alexandre G. Bracale, Denis A. Masliah
  • Patent number: 8334178
    Abstract: A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and the junction gate. The double-gate semiconductor device provides improved RF capability in addition to operability at higher power levels as compared to conventional transistor devices. The double-gate semiconductor device may also be fabricated in a higher spatial density configuration such that a common implantation between the MOS gate and the junction gate is eliminated.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: December 18, 2012
    Assignee: ACCO Semiconductor, Inc.
    Inventors: Denis A. Masliah, Alexandre G. Bracale, Francis C. Huin, Patrice J. Barroul
  • Publication number: 20120205724
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Application
    Filed: April 10, 2012
    Publication date: August 16, 2012
    Inventors: Alexandre G. Bracale, Denis A. Masliah
  • Patent number: 8188540
    Abstract: A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and the junction gate. The double-gate semiconductor device provides improved RF capability in addition to operability at higher power levels as compared to conventional transistor devices. The double-gate semiconductor device may also be fabricated in a higher spatial density configuration such that a common implantation between the MOS gate and the junction gate is eliminated.
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: May 29, 2012
    Assignee: ACCO Semiconductor, Inc.
    Inventors: Denis A. Masliah, Alexandre G. Bracale, Francis C. Huin, Patrice J. Barroul
  • Patent number: 8179197
    Abstract: Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
    Type: Grant
    Filed: May 13, 2011
    Date of Patent: May 15, 2012
    Assignee: ACCO Semiconductor, Inc.
    Inventors: Alexandre G. Bracale, Denis A. Masliah
  • Publication number: 20110278675
    Abstract: An IGFET device includes: —a semiconductor body having a major surface, —a source region of first conductivity type abutting the surface, —a drain region of the first conductivity-type abutting the surface and spaced from the source region with a channel therefrom, —an active gate overlying the channel and insulated from the channel by a first dielectric material forming the gate oxide of the IGFET device, —a dummy gate positioned between the active gate and the drain and insulated from the active gate by a second dielectric material so that a capacitance is formed between the active gate and the dummy gate, and insulated from the drain region by the gate oxide, wherein the active gate and the dummy gate are forming the electrodes of the capacitance substantially perpendicular to the surface.
    Type: Application
    Filed: July 22, 2011
    Publication date: November 17, 2011
    Inventor: Denis Masliah
  • Publication number: 20110269419
    Abstract: RF switching devices are provided that alternatively couple an antenna to either a transmitter amplifier or a receiver amplifier. An exemplary RF switching device comprises two valves, one for a receiver transmission line between the antenna and the receiver amplifier, the other for a transmitter transmission line between the antenna and the power amplifier. Each valve is switchably coupled between ground and its transmission line. When coupled to ground, current flowing through the valve increases the impedance of the transmission line thereby attenuating signals on the transmission line. When decoupled from ground, the impedance of the transmission line is essentially unaffected. The pair of valves is controlled such that when one valve is on the other valve is off, and vice versa, so that the antenna is either receiving signals from the power amplifier or the receiver amplifier is receiving signals from the antenna.
    Type: Application
    Filed: April 30, 2010
    Publication date: November 3, 2011
    Inventor: Denis A. Masliah