Abstract: Method of contactless measurement of the conductivity of semiconductors, said method being implemented by: a first assembly comprising a signal emission/reception system —a second assembly comprising at least one semi-conducting target and an inductor element, —a third assembly, said method comprising at least the following steps: a) the first assembly emits a multifrequency signal, b) the second assembly reflects or transmits at least one part of the multifrequency signal emitted, c) the first assembly receives the reflected multifrequency signal reflected by the second assembly, d) the third assembly calculates the coefficient of reflection or of transmission of the emitted signal, e) the third assembly provides the conductivity of the semiconducting target.

Abstract: The invention relates to a photoreceptor device, with a first crystalline, semi-conductive material, comprising a first lattice parameter, and a second crystalline, semi-conductive material, deposited on the first material and comprising a second lattice parameter, different from the first lattice parameter. In particular, the device comprises an interface layer between the first and second materials, made from an amorphous material and structured to comprise regularly spaced apart openings in the plane of the layer. The second material comprises protuberances coming out of the openings of the interface layer and forming separated crystal grains, each grain comprising a plurality of facets forming at least one angle relative to one another.

Abstract: Method of contactless measurement of the conductivity of semiconductors, said method being implemented by: a first assembly comprising a signal emission/reception system —a second assembly comprising at least one semi-conducting target and an inductor element, —a third assembly, said method comprising at least the following steps: a) the first assembly emits a multifrequency signal, b) the second assembly reflects or transmits at least one part of the multifrequency signal emitted, c) the first assembly receives the reflected multifrequency signal reflected by the second assembly, d) the third assembly calculates the coefficient of reflection or of transmission of the emitted signal, e) the third assembly provides the conductivity of the semiconducting target.