Patents by Inventor Denis Michael Murphy

Denis Michael Murphy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium nitride integrated circuits including non-gold-based metallic materials
    Patent number: 12087713
    Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
    Type: Grant
    Filed: December 30, 2022
    Date of Patent: September 10, 2024
    Assignee: Analog Devices, Inc.
    Inventors: Daniel Piedra, James G. Fiorenza, Puneet Srivastava, Andrew Proudman, Kenneth Flanders, Denis Michael Murphy, Leslie P. Green, Peter R. Stubler
  • GALLIUM NITRIDE INTEGRATED CIRCUITS
    Publication number: 20230154875
    Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
    Type: Application
    Filed: December 30, 2022
    Publication date: May 18, 2023
    Inventors: Daniel Piedra, James G. Fiorenza, Puneet Srivastava, Andrew Proudman, Kenneth Flanders, Denis Michael Murphy, Leslie P. Green, Peter R. Stubler
  • ALUMINUM-BASED GALLIUM NITRIDE INTEGRATED CIRCUITS
    Publication number: 20230133481
    Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
    Type: Application
    Filed: December 30, 2022
    Publication date: May 4, 2023
    Inventors: Daniel Piedra, James G. Fiorenza, Puneet Srivastava, Andrew Proudman, Kenneth Flanders, Denis Michael Murphy, Leslie P. Green, Peter R. Stubler
  • Aluminum-based gallium nitride integrated circuits
    Patent number: 11569182
    Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: January 31, 2023
    Assignee: Analog Devices, Inc.
    Inventors: Daniel Piedra, James G. Fiorenza, Puneet Srivastava, Andrew Proudman, Kenneth Flanders, Denis Michael Murphy, Leslie P. Green, Peter R. Stubler
  • ALUMINUM-BASED GALLIUM NITRIDE INTEGRATED CIRCUITS
    Publication number: 20210118871
    Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.
    Type: Application
    Filed: October 1, 2020
    Publication date: April 22, 2021
    Inventors: Daniel Piedra, James G. Fiorenza, Puneet Srivastava, Andrew Proudman, Kenneth Flanders, Denis Michael Murphy, Leslie P. Green, Peter A. Stubler