Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A photosensor array includes data and scan lines (124, 148), circuitry of each data line/scan line pair formed in a backplane (110) on a substrate (102). On a first electrode scan line (148) a switching element (112) responds to a scan signal, connecting a first terminal (106) to a second terminal (108). A front plane (120) has sensing elements (122) indicating a measure of a received stimulus and including a charge collection electrode (130). An insulating layer (140) disposed between the backplane (110) and the front plane (120) contains at least a first via (136) connecting the first terminal (108) of the switching element (112) in the backplane (110) to a charge collection electrode (130) of the sensing element (122) in the front plane (120). A second via (126) connects between the second terminal (108) of the switching element (112) and the data line (124).

Abstract: A photosensor array includes data and scan lines (124, 148), circuitry of each data line/scan line pair formed in a backplane (110) on a substrate (102). On a first electrode scan line (148) a switching element (112) responds to a scan signal, connecting a first terminal (106) to a second terminal (108). A front plane (120) has sensing elements (122) indicating a measure of a received stimulus and including a charge collection electrode (130). An insulating layer (140) disposed between the backplane (110) and the front plane (120) contains at least a first via (136) connecting the first terminal (108) of the switching element (112) in the backplane (110) to a charge collection electrode (130) of the sensing element (122) in the front plane (120). A second via (126) connects between the second terminal (108) of the switching element (112) and the data line (124).

Abstract: A flexible display device (10) is disclosed. The flexible display device comprises a flexible substrate (12), a number of display pixels (14) arranged in a form of rows and columns on the surface of the substrate, a number of grooves (16) in the surface of the substrate each of which is formed in between adjacent two rows or columns of the display pixels (14), and connection lines (18) for electrically interconnecting the plurality of display pixels (14), thereby providing flexibility to the display device and, at the same time, minimizing the propagation of mechanical stress caused when the display device is bent or rolled. A method of manufacturing the display device is also disclosed.

Abstract: A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planariza-tion dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap.

Abstract: A flexible display device (10) is disclosed. The flexible display device comprises a flexible substrate (12), a number of display pixels (14) arranged in a form of rows and columns on the surface of the substrate, a number of grooves (16) in the surface of the substrate each of which is formed in between adjacent two rows or columns of the display pixels (14), and connection lines (18) for electrically interconnecting the plurality of display pixels (14), thereby providing flexibility to the display device and, at the same time, minimizing the propagation of mechanical stress caused when the display device is bent or rolled. A method of manufacturing the display device is also disclosed.