Abstract: An e-beam system for making masks corrects the beam for pattern-dependent errors by executing the bulk of the post-processing program only once, with two sets of output data being generated by the encode routine. A first output file of the encode routine generates the beam control data without pattern-dependent corrections. A second output file merges the beam control data with the data for metrology marks. A test wafer is patterned using the second output file and measured to generate a set of pattern correction data. Production wafers are written using the beam control data corrected on the fly by the pattern correction data.

Abstract: A technique for creating an improved mask used in the semiconductor industry for replicating desired images in semiconductor bodies. The invention has application in both direct writing and blind writing processes and employs the steps of writing, in a sacrificial photoresist, a selected pattern of marks with an E-beam lithography system, measuring the actual pattern created and modifying the magnetic and electrostatic force used to control the beam to correct for stage translational errors, magnification, drift, mirror distortion, and column charging, caused by either mechanical aspects or by electrical problems in the system. A prototype mask is then created containing the actual image to be replicated, the image being provided with a plurality of alignment marks, and the actual positions of the marks in the prototype mask are measured.