Patents by Inventor Dennis A. Adams

Dennis A. Adams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8258027
    Abstract: An embodiment of a method is disclosed to integrate silicon oxide nitride oxide silicon (SONOS) non-volatile memory (NVM) into a conventional complementary metal oxide semiconductor (CMOS) semiconductor foundry process flow. An embodiment of the method only adds a few additional steps to a standard CMOS foundry process flow and makes minor changes to the rest of the baseline CMOS foundry process flow to form a new process module that includes both CMOS devices and an embedded SONOS NVM.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: September 4, 2012
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Joseph Terence Smith, Dennis A. Adams, Patrick Bruckner Shea
  • Publication number: 20090059675
    Abstract: In one aspect, a radiation hardened transistor includes a buried source, buried drain and a poly-silicon gate separated from the buried source and the buried drain by a buried oxide. A recessed P+ implant or a blanket P+ implant is disposed in a substrate. A portion of the recessed P+ implant or a portion of the blanket P+ implant is disposed beneath outer edges of the poly-silicon gate, in a channel separating the buried source and the buried drain.
    Type: Application
    Filed: August 28, 2007
    Publication date: March 5, 2009
    Inventors: Joseph T. Smith, Dennis A. Adams, Stephen J. Wrazien, Michael D. Fitzpatrick, Philip Smith
  • Patent number: D415244
    Type: Grant
    Filed: August 6, 1998
    Date of Patent: October 12, 1999
    Inventor: Dennis A. Adams