Abstract: A composite focal plane assembly with an expandable architecture has a multi-layer, double-sided aluminum nitride (AlN) substrate and vertical architecture to achieve the dual function of focal plane and electronics backplane. Imaging dice and other electrical components are mounted and wire bonded to one surface and then direct backplane connectivity is provided on the opposing surface through a matrix of electrical contacts. In one embodiment, a flexible connector is sandwiched between the AlN focal plane and a FR-4 backplane is used to compensate for differences in coefficient of thermal expansion (CTE) between the AlN and commercially available high density circuit card connectors that are commonly manufactured from materials with CTE properties more closely approximating FR-4. In an alternate embodiment, the FR-4 and flexible connectors are eliminated by using high density circuit card connectors that are fabricated out of materials more closely matching the CTE of AlN.

Abstract: A composite focal plane assembly with an expandable architecture has a multi-layer, double-sided aluminum nitride (AlN) substrate and vertical architecture to achieve the dual function of focal plane and electronics backplane. Imaging dice and other electrical components are mounted and wire bonded to one surface and then direct backplane connectivity is provided on the opposing surface through a matrix of electrical contacts. In one embodiment, a flexible connector is sandwiched between the AlN focal plane and a FR-4 backplane is used to compensate for differences in coefficient of thermal expansion (CTE) between the AlN and commercially available high density circuit card connectors that are commonly manufactured from materials with CTE properties more closely approximating FR-4. In an alternate embodiment, the FR-4 and flexible connectors are eliminated by using high density circuit card connectors that are fabricated out of materials more closely matching the CTE of AlN.

Abstract: High power, low degree of polarization superluminescent diodes (SLDS) are described. A semiconductor optical amplifier (SOA) which amplifies light in substantially one polarizaton state can be used to create a SLD by combining the output from both sides of this polarization sensitive SOA in a manner which results in a depolarized output.

Abstract: In embodiments, the present invention is directed to systems and methods for operating an incoherently beam combined (IBC) laser. The IBC laser may comprise an integrated set of emitters or a set of discrete emitters. Each emitter is associated with a high-pass, low-pass, or bandpass optical filter. The emitters and filters are disposed in an ordered arrangement thereby defining a common optical path. Near the end of the common optical path, a focusing lens may be utilized to focus the output beams from each of the emitters into a fiber. A partially reflective component may be embedded in the fiber to provide feedback to each of the emitters. By selecting the optical characteristics of the filters, light originating from a specific emitter is fed back to the same emitter and to no other emitter. Accordingly, multiple external laser cavities are created on the same optical path.

Abstract: High power, low degree of polarization superluminescent diodes (SLDS) are described. A semiconductor optical amplifier (SOA) which amplifies light in substantially one polarizaton state can be used to create a SLD by combining the output from both sides of this polarization sensitive SOA in a manner which results in a depolarized output.

Abstract: A technique for passive alignment of an opto-electronic device, such as laser, by alignment fiducials to a silicon wafer board utilizes a tilted notch in the opto-electronic device. This system overcomes limitations using standard etched notches for previous passive alignment systems. Specifically, the tilted notch presents a range of offset distances between the edge of the notch and the active light-emitting spot of the laser. Depending on the location at which the wafer is diced or cleaved, the distance from the notch on the laser to the laser stripe can be adjusted after the laser wafer is fabricated.