Patents by Inventor Dennis Buss

Dennis Buss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060131584
    Abstract: The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device (100). The device (100) comprises a tensile-strained silicon layer (105) located on a silicon-germanium substrate (110) and silicon-germanium source/drain structures (135, 140) located on or in the tensile-strained silicon layer (105). The PMOS device (100) further includes a channel region (130) located between the silicon-germanium source/drain structures (135, 140) and within the tensile-strained silicon layer (105). The channel region (130) has a compressive stress (145) in a direction parallel to an intended current flow (125) through the channel region (130). Other embodiments of the present invention include a method of manufacturing the PMOS device (200) and a MOS device (300).
    Type: Application
    Filed: January 24, 2006
    Publication date: June 22, 2006
    Inventor: Dennis Buss
  • Publication number: 20050224798
    Abstract: The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device (100). The device (100) comprises a tensile-strained silicon layer (105) located on a silicon-germanium substrate (110) and silicon-germanium source/drain structures (135, 140) located on or in the tensile-strained silicon layer (105). The PMOS device (100) further includes a channel region (130) located between the silicon-germanium source/drain structures (135, 140) and within the tensile-strained silicon layer (105). The channel region (130) has a compressive stress (145) in a direction parallel to an intended current flow (125) through the channel region (130). Other embodiments of the present invention include a method of manufacturing the PMOS device (200) and a MOS device (300).
    Type: Application
    Filed: April 6, 2004
    Publication date: October 13, 2005
    Applicant: Texas Instruments, Incorporated
    Inventor: Dennis Buss
  • Patent number: 4982596
    Abstract: A die (20) particularly adapted for making a screw blank having a reduced diameter, offset or asymmetric section has a first die section (30) having a central bore (32), which mates with a second die section (50) having a smaller diameter and/or offset bore (52). A shaped end (57) of the smaller or offset bore (52), which forms the reduced diameter, offset or asymmetric section of a screw blank, is coated with a hard lubricating material. The method of manufacturing the die (20) involves making two first die sections (30), which are preferably identical, from a first die body (130), and two second die sections (50), which are also preferably identical and adapted to mate with the first die section (30), from a second die body (150).
    Type: Grant
    Filed: January 26, 1990
    Date of Patent: January 8, 1991
    Assignee: Buell Industries, Inc.
    Inventors: Francis C. Peterson, Dennis Buss