Abstract: A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.

Abstract: A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.

Abstract: A semiconductor light emitting heterostructure device is disclosed. The device comprises an n-type GaAs substrate, a first n-type laeyr of AlGaAs adjacent to the substrate, a second p-type light emitting AlGaAs layer adjacent to the first layer, and a third p-type AlGaAs layer suitable for bonding to an aluminum contact. The device starts with an n-type substrate which is more readily available and has a p-side up configuration which is more suitable for bonding to an aluminum contact.

Abstract: A liquid phase epitaxial reactor is provided in which a simple cycling mechanism sequentially feeds semiconductor wafers from an input stack into a deposition region and thence to an output stack. In preferred embodiments, a cam is employed to tilt the output stack to accommodate the positioning of each successive wafer in the stack.