Patents by Inventor Dennis C. Fenske

Dennis C. Fenske has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma enhanced chemical processing reactor and method
    Publication number: 20020078893
    Abstract: A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
    Type: Application
    Filed: November 16, 2001
    Publication date: June 27, 2002
    Applicant: Applied Materials , Inc.
    Inventors: Ron van Os, William J. Durbin, Richard H. Matthiesen, Dennis C. Fenske, Eric D. Ross
  • Plasma enhanced chemical processing reactor and method
    Patent number: 6375750
    Abstract: An apparatus for processing a substrate comprising a processing chamber and a substrate support system comprising an electrostatic chuck having a body portion and a substrate support surface and one or more arms extending from the body portion to mount the electrostatic chuck to a side wall portion of the processing chamber is provided.
    Type: Grant
    Filed: May 18, 2000
    Date of Patent: April 23, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Ron van Os, William J. Durbin, Richard H. Matthiesen, Dennis C. Fenske, Eric D. Ross
  • Plasma enhanced chemical processing reactor
    Patent number: 6178918
    Abstract: A plasma enhance chemical processing reactor and method. The reactor includes a plasma chamber and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wager support and a gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
    Type: Grant
    Filed: June 5, 1998
    Date of Patent: January 30, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Ron van Os, William J. Durbin, Richard H. Matthiesen, Dennis C. Fenske, Eric D. Ross
  • Plasma enchanced chemical method
    Patent number: 6001267
    Abstract: A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support, applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support, and exhausting the reactor in a substantially symmetrical manner.
    Type: Grant
    Filed: February 21, 1997
    Date of Patent: December 14, 1999
    Assignee: Watkins-Johnson Company
    Inventors: Ron van Os, William J. Durbin, Richard H. Matthiesen, Dennis C. Fenske, Eric D. Ross
  • Plasma enhanced chemical processing reactor and method
    Patent number: 5792272
    Abstract: A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
    Type: Grant
    Filed: August 12, 1997
    Date of Patent: August 11, 1998
    Assignee: Watkins-Johnson Company
    Inventors: Ron van Os, William J. Durbin, Richard H. Matthiesen, Dennis C. Fenske, Eric D. Ross