Patents by Inventor Dennis C. Green

Dennis C. Green has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cross-linked polyalkenyl phenol based photoresist compositions
    Patent number: 4600683
    Abstract: A film forming, radiation sensitive resist composition having improved thermal stability and a reduced dissolution rate in developer solutions, comprised of a sensitizer and a polyalkenyl phenol such as a polyvinyl phenol cross-linked, prior to irradiation, with a poly-functional cross-linking agent such as dimethylol p-cresol or hexamethylene tetramine.
    Type: Grant
    Filed: April 22, 1985
    Date of Patent: July 15, 1986
    Assignee: International Business Machines Corp.
    Inventors: Stephen E. Greco, Dennis C. Green
  • Substituted heterofulvalenes
    Patent number: 4312992
    Abstract: Substituted derivatives of tetrathiafulvalene, tetraselenafulvalene and dithiadiselenafulvalene having the general formulae ##STR1## where Z is S and Y is S; Z is S and Y is Se; and Z is Se and Y is Se, and R can be CO.sub.2 H, R'R"COH, R'CHOH, COR', SCH.sub.3, SO.sub.2.sup.- Li.sup.+, SnR.sub.3 ', SiR.sub.3, --CH.sub.2 OH --CO.sub.2 R', R'CHOH, CHO, CR.sub.2 ' CR.sub.2 'OH, TTF, TSeF and DTDSeF, R' and R" can be the same or different and is selected from the group consisting of alkyls, aryls, alkaryls, ether substituted alkyls, halogen substituted alkyls and halogens, are prepared. A novel method for their preparation is also described.
    Type: Grant
    Filed: September 13, 1979
    Date of Patent: January 26, 1982
    Assignee: International Business Machines Corporation
    Inventor: Dennis C. Green
  • Method of controlling silicon wafer etching rates-utilizing a diazine catalyzed etchant
    Patent number: 4155866
    Abstract: A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed.
    Type: Grant
    Filed: April 24, 1978
    Date of Patent: May 22, 1979
    Assignee: International Business Machines Corporation
    Inventors: Melvin Berkenblit, Dennis C. Green, Frank B. Kaufman, Arnold Reisman