Abstract: Disclosed is a content addressable memory (CAM). The content addressable memory array includes a memory array and a data match module. The memory array includes multiple memory rows. Each memory row is configured to store a first data word and a second data word. The data match module includes a first match circuitry configured to compare a first match word to the first data word of a memory row, and to generate a first match output based on the comparison between the first match word and the first data word of the memory row. The data match module further includes a second match circuitry configured to compare a second match word to the second data word of the memory row, and to generate a second match output based on the comparison between the second match word and the second data word of the memory row.

Abstract: Disclosed is a content addressable memory (CAM). The content addressable memory array includes a memory array and a data match module. The memory array includes multiple memory rows. Each memory row is configured to store a first data word and a second data word. The data match module includes a first match circuitry configured to compare a first match word to the first data word of a memory row, and to generate a first match output based on the comparison between the first match word and the first data word of the memory row. The data match module further includes a second match circuitry configured to compare a second match word to the second data word of the memory row, and to generate a second match output based on the comparison between the second match word and the second data word of the memory row.

Abstract: Disclosed is a content addressable memory (CAM). The content addressable memory array includes a memory array and a data match module. The memory array includes multiple memory rows. Each memory row is configured to store a first data word and a second data word. The data match module includes a first match circuitry configured to compare a first match word to the first data word of a memory row, and to generate a first match output based on the comparison between the first match word and the first data word of the memory row. The data match module further includes a second match circuitry configured to compare a second match word to the second data word of the memory row, and to generate a second match output based on the comparison between the second match word and the second data word of the memory row.

Abstract: Disclosed is a content addressable memory (CAM). The content addressable memory array includes a memory array and a data match module. The memory array includes multiple memory rows. Each memory row is configured to store a first data word and a second data word. The data match module includes a first match circuitry configured to compare a first match word to the first data word of a memory row, and to generate a first match output based on the comparison between the first match word and the first data word of the memory row. The data match module further includes a second match circuitry configured to compare a second match word to the second data word of the memory row, and to generate a second match output based on the comparison between the second match word and the second data word of the memory row.

Abstract: A nonvolatile memory comprising an array of memory cells and sense amplifiers, each sense amplifier using a keeper circuit to provide an amount of current to compensate for bit line leakage current in the memory array. The amount of current from the keeper depends on the temperature of the memory and the speed of the process used to make the memory.

Abstract: A nonvolatile memory comprising an array of memory cells and sense amplifiers, each sense amplifier using a keeper circuit to provide an amount of current to compensate for bit line leakage current in the memory array. The amount of current from the keeper depends on the temperature of the memory and the speed of the process used to make the memory.

Abstract: A nonvolatile memory comprising an array of memory cells and sense amplifiers, each sense amplifier using a keeper circuit to provide an amount of current to compensate for bit line leakage current in the memory array. The amount of current from the keeper depends on the temperature of the memory and the speed of the process used to make the memory.

Abstract: A nonvolatile memory comprising an array of memory cells and sense amplifiers, each sense amplifier using a keeper circuit to provide an amount of current to compensate for bit line leakage current in the memory array. The amount of current from the keeper depends on the temperature of the memory and the speed of the process used to make the memory.

Abstract: A memory circuit includes a number of bit line structures, each including at least three bit lines; a number of word lines that intersect with the bit line structures at a number of sites; and a number of switching devices located at the sites. A number of column sense logic units are also provided, corresponding to the bit line structures. Each of the column sense logic units includes a first logic gate and a second logic gate. The first logic gate has a first input connected with a first one of the bit lines and a second input connected with a second one of the bit lines. The second logic gate has a first input interconnected with a third one of the bit lines, and a second input interconnected with the second one of the bit lines.

Abstract: An integrated circuit includes memory circuitry with a number of bit line structures, each including at least three bit lines; a number of word lines that intersect with the bit line structures at a number of sites; and a number of switching devices located at the sites. A number of VSS planes are interconnected with the switching devices. The switching devices and the VSS planes are formed at a first level. The VSS planes can be formed as substantially complementary interlocking regions that also form functional portions of the switching devices. The switching devices can be connected between an adjacent one of the word lines and a selected one of the bit lines of an adjacent one of the bit line structures for selective electrical conduction therebetween upon activation by the adjacent one of the word lines.

Abstract: A method and apparatus are provided for reducing leakage current in a read only memory device. Leakage current is reduced by reducing the duration of the precharge cycle during each read cycle so that the associated leakage current will flow for a shorter time period during each cycle. The precharge phase is positioned at the beginning of each read cycle, prior to the evaluation phase.

Abstract: Content addressable memories are disclosed that provide at least three states and are based on existing binary CAM devices. A higher order CAM having at least three states comprises a binary CAM having two binary bits; and a logic circuit to configure the two binary bits as a single CAM bit having said at least three states. The three states include a don't care state, a logic 0 state and a logic 1 state. The logic circuit may be embodied as two OR gates. The first match search (MS) input and a first wild card (WC) input of the higher order CAM are applied to inputs of the two OR gates and the outputs of the two OR gates are applied to the wild card (WC) inputs of the binary CAM. The match search (MS) inputs of the binary CAM are tied to a power supply voltage.

Abstract: A method and apparatus are provided for reducing leakage current in a read only memory device. Leakage current is reduced by precharging only a portion of the columns in a read only memory array during a given read cycle. The portion of the columns that are precharged is limited to a subset of columns that includes those columns that will be read during a given read cycle. A read column address is decoded to precharge only the portion of the columns of transistors that will be read during the given read cycle. The columns of transistors can be grouped into a plurality of sub-arrays and only those sub-arrays having columns that will be read during a given read cycle are precharged during the read cycle.

Abstract: A method and apparatus are provided for reducing leakage current in a read only memory device. Leakage current is reduced by reducing the duration of the precharge cycle during each read cycle so that the associated leakage current will flow for a shorter time period during each cycle. The precharge phase is positioned at the beginning of each read cycle, prior to the evaluation phase. The precharge phase is terminated by a subsequent clock edge or by an internal time out prior to a subsequent clock edge. The time interval between when the columns reach their precharge voltage and the evaluation phase begins is reduced.

Abstract: A method and apparatus are provided for reducing leakage current in a read only memory device. Leakage current is reduced by applying a biased gate voltage (relative to a source voltage) to the gate of at least one of transistor in the array. The biased gate voltage is applied at least during a precharge phase of a read cycle. When the array transistors are n-channel transistors, the biased voltage is a negative bias voltage (relative to the source voltage). When the array transistors are p-channel transistors, the biased voltage is a positive bias voltage (relative to the source voltage). Applying a negative backgate bias to the transistor's p-well contact can also reduce n-channel transistor subthreshold leakage current. Thus, for an n-channel array, a negative gate voltage and backgate bias (optional) are applied to cell transistors in the off state.

Abstract: Content addressable memories are disclosed that provide at least three states and are based on existing binary CAM devices. A higher order CAM having at least three states comprises a binary CAM having two binary bits; and a logic circuit to configure the two binary bits as a single CAM bit having said at least three states. The three states include a don't care state, a logic 0 state and a logic 1 state. The logic circuit may be embodied as two OR gates. The first match search (MS) input and a first wild card (WC) input of the higher order CAM are applied to inputs of the two OR gates and the outputs of the two OR gates are applied to the wild card (WC) inputs of the binary CAM. The match search (MS) inputs of the binary CAM are tied to a power supply voltage.