Patents by Inventor Dennis Hanken

Dennis Hanken has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal
    Patent number: 7790631
    Abstract: Methods and apparatuses to selectively deposit a dielectric on a self-assembled monolayer (“SAM”) adsorbed metal are described. A wafer includes a device having a first electrode. A first self-assembled monolayer is deposited on the wafer covering the first electrode. Next, a portion of the first self-assembled monolayer is removed to expose the first electrode. The first self-assembled monolayer includes a hydrophobic layer. Further, second self-assembled monolayer is deposited on the first electrode. The second self-assembled monolayer includes a hydrophilic layer. Next, an insulating layer is deposited on the second self-assembled monolayer. Further, self-aligned contacts to one or more second electrodes of the device are formed.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: September 7, 2010
    Assignee: Intel Corporation
    Inventors: Ajay K. Sharma, Sean King, Dennis Hanken, Andrew W. Ott
  • METHOD TO DEPOSIT SILICON FILM ON A SUBSTRATE
    Publication number: 20080237660
    Abstract: A semiconductor device and a method to fabricate a semiconductor device on a silicon substrate are illustrated. The semiconductor may comprise an amorphous silicon film, in the source/drain region of a semiconductor, having low amount of hydrogen and high concentration of carbon and phosphorous, which enhances performance of the semiconductor device.
    Type: Application
    Filed: March 30, 2007
    Publication date: October 2, 2008
    Inventors: Ajay K. Sharma, Anand Murthy, Din-How Mei, Dennis Hanken
  • Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal
    Publication number: 20080116481
    Abstract: Methods and apparatuses to selectively deposit a dielectric on a self-assembled monolayer (“SAM”) adsorbed metal are described. A wafer includes a device having a first electrode. A first self-assembled monolayer is deposited on the wafer covering the first electrode. Next, a portion of the first self-assembled monolayer is removed to expose the first electrode. The first self-assembled monolayer includes a hydrophobic layer. Further, second self-assembled monolayer is deposited on the first electrode. The second self-assembled monolayer includes a hydrophilic layer. Next, an insulating layer is deposited on the second self-assembled monolayer. Further, self-aligned contacts to one or more second electrodes of the device are formed.
    Type: Application
    Filed: November 21, 2006
    Publication date: May 22, 2008
    Inventors: Ajay K. Sharma, Sean King, Dennis Hanken, Andrew W. Ott