Patents by Inventor Dennis Hoyniak

Dennis Hoyniak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a retrograde implant
    Patent number: 6797592
    Abstract: A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.
    Type: Grant
    Filed: April 23, 2003
    Date of Patent: September 28, 2004
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey S. Brown, Bryant C. Colwill, Terence B. Hook, Dennis Hoyniak
  • Method for forming a retrograde implant
    Publication number: 20030211715
    Abstract: A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.
    Type: Application
    Filed: April 23, 2003
    Publication date: November 13, 2003
    Inventors: Jeffrey S. Brown, Bryant C. Colwill, Terence B. Hook, Dennis Hoyniak
  • METHOD FOR FORMING A RETROGRADE IMPLANT
    Publication number: 20030162374
    Abstract: A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.
    Type: Application
    Filed: February 26, 2002
    Publication date: August 28, 2003
    Applicant: International Business Machines Corporation
    Inventors: Jeffrey S. Brown, Bryant C. Colwill, Terence B. Hook, Dennis Hoyniak
  • Method for forming a retrograde implant
    Patent number: 6610585
    Abstract: A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.
    Type: Grant
    Filed: February 26, 2002
    Date of Patent: August 26, 2003
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey S. Brown, Bryant C. Colwill, Terence B. Hook, Dennis Hoyniak
  • Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same
    Patent number: 6504207
    Abstract: A method and structure for a EEPROM memory device integrated with high performance logic or NVRAM. The EEPROM device includes a floating gate and program gate self-aligned with one another. During programming, electron tunneling occurs between the floating gate and the program gate.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: January 7, 2003
    Assignee: International Business Machines Corporation
    Inventors: Bomy A. Chen, Jay G. Harrington, Kevin M. Houlihan, Dennis Hoyniak, Chung Hon Lam, Hyun Koo Lee, Rebecca D. Mih, Jed H. Rankin
  • Asymmetrical field effect transistor
    Patent number: 6271565
    Abstract: A method of producing an asymmetrical semiconductor device with ion implantation techniques and semiconductor devices constructed according to this method in which a barrier of ion absorbing material of height h is positioned beside a structure on a semiconductor surface. The barrier is located at a maximum distance d from one side of the structure, and an angled ion implant is directed at the side of the structure. The maximum distance d of the barrier from the side of the structure is equal to the height of the barrier h divided by the tangent of the angle of the ion implant so that the side of the structure is shadowed from the ion implant. A second ion implant is directed to the opposite side of the structure on the semiconductor surface, thereby forming a desired implant and producing the asymmetrical semiconductor device.
    Type: Grant
    Filed: March 1, 2000
    Date of Patent: August 7, 2001
    Assignee: International Business Machines Corporation
    Inventors: Terence B. Hook, Dennis Hoyniak, Edward J. Nowak
  • Method to perform selective drain engineering with a non-critical mask
    Patent number: 6083794
    Abstract: A method of producing an asymmetrical semiconductor device with ion implantation techniques and semiconductor devices constructed according to this method in which a barrier of ion absorbing material of height h is positioned beside a structure on a semiconductor surface. The barrier is located at a maximum distance d from one side of the structure, and an angled ion implant is directed at the side of the structure. The maximum distance d of the barrier from the side of the structure is equal to the height of the barrier h divided by the tangent of the angle of the ion implant so that the side of the structure is shadowed from the ion implant. A second ion implant is directed to the opposite side of the structure on the semiconductor surface, thereby forming a desired implant and producing the asymmetrical semiconductor device.
    Type: Grant
    Filed: July 10, 1997
    Date of Patent: July 4, 2000
    Assignee: International Business Machines Corporation
    Inventors: Terence B. Hook, Dennis Hoyniak, Edward J. Nowak