Abstract: A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines an amount of gas loss within the system due to the abatement sub-system. The master controller determines a flow setpoint for the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers based on the identified flow ratio setpoint and the determined amount of gas loss.

Abstract: A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines a flow setpoint for the at least one of the process gas or the carrier gas through the set of mass flow controllers based on the identified flow ratio setpoint. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers and based on a back pressure reading provided by a back pressure sensor.

Abstract: A master controller identifies a flow ratio setpoint for at least one of a process gas or a carrier gas flow to a process chamber through a set of mass flow controllers. The master controller determines a flow setpoint for the at least one of the process gas or the carrier gas through the set of mass flow controllers based on the identified flow ratio setpoint. The master controller controls the at least one of the process gas flow or the carrier gas flow through each of the set of mass flow controllers according to the determined flow setpoint for each of the set of mass flow controllers and based on a back pressure reading provided by a back pressure sensor.

Abstract: A master controller determines a first flow setpoint for a process flow gas and/or a carrier gas flow through a first mass flow controller. The master controller obtains a back pressure setpoint of a distribution manifold and determines a second flow setpoint for the process gas flow and/or the carrier gas flow through a second mass flow controller or a back pressure controller based on the determined first flow setpoint and the obtained back pressure setpoint. The master controller controls the process gas flow and/or the carrier gas flow through the first mass flow controller to the first flow setpoint and the second mass flow controller and/or the back pressure controller to the second flow setpoint. The master controller controls the back pressure of the distribution manifold to the back pressure set point in view of a back pressure reading from a back pressure sensor of the distribution manifold.

Abstract: A master controller determines a first flow setpoint for a process flow gas and/or a carrier gas flow through a first mass flow controller. The master controller obtains a back pressure setpoint of a distribution manifold and determines a second flow setpoint for the process gas flow and/or the carrier gas flow through a second mass flow controller or a back pressure controller based on the determined first flow setpoint and the obtained back pressure setpoint. The master controller controls the process gas flow and/or the carrier gas flow through the first mass flow controller to the first flow setpoint and the second mass flow controller and/or the back pressure controller to the second flow setpoint. The master controller controls the back pressure of the distribution manifold to the back pressure set point in view of a back pressure reading from a back pressure sensor of the distribution manifold.

Abstract: In embodiments, a process gas supply provides a carrier gas and one or more process gases to a distribution manifold. A back pressure sensor senses back pressure in the distribution manifold and provides a signal to the first controller based at least in part on the back pressure. The first controller determines a back pressure set point based at least in part on the signal. One or more mass flow controllers control the flow of the gas mixture comprising the carrier gas and the one or more process gases into one or more zones of the process chamber. An upstream pressure controller fluidly and operatively connected to the distribution manifold controls flow of the carrier gas based on the back pressure set point.

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

Abstract: In embodiments, a process gas supply provides a carrier gas and one or more process gases to a distribution manifold. A back pressure sensor senses back pressure in the distribution manifold and provides a signal to the first controller based at least in part on the back pressure. The first controller determines a back pressure set point based at least in part on the signal. One or more mass flow controllers control the flow of the gas mixture comprising the carrier gas and the one or more process gases into one or more zones of the process chamber. An upstream pressure controller fluidly and operatively connected to the distribution manifold controls flow of the carrier gas based on the back pressure set point.

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiment include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiment include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

Abstract: A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas panel, and exhaust gases from the reactor are used to purge the gas panel. Gases from the reactor may be cooled before flowing to the gas panel.

Abstract: A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas panel, and exhaust gases from the reactor are used to purge the gas panel. Gases from the reactor may be cooled before flowing to the gas panel.

Abstract: A system and method for safely enabling the delivery of at least one gas line to at least one point of use in a facility by using a vacuum system and a gas delivery system wherein the gas delivery system is housed within the vacuum system is disclosed herein. An interior volume of a conduit containing therein at least one gas line is maintained at reduced pressure as one end of the gas line connects to a gas source and another end of the gas line connects to a point of use. By using a conduit to enclose the individual gas lines and using a single feed line for each gas, the embodiments disclosed herein reduce the number of individual gas lines that need to be run through a facility.

Abstract: Implementations described herein disclose epitaxial deposition chambers and components thereof. In one implementation, a chamber can include a substrate support positioned in a processing region, a radiant energy assembly comprising a plurality of radiant energy sources, a liner assembly having an upper liner and a lower liner, and a dome assembly positioned between the substrate support and the radiant energy assembly. The epitaxial deposition chambers described herein allow for processing of larger substrates, while maintaining throughput, reducing costs and providing a reliably uniform deposition product.

Abstract: A system and method for safely enabling the delivery of at least one gas line to at least one point of use in a facility by using a vacuum system and a gas delivery system wherein the gas delivery system is housed within the vacuum system is disclosed herein. An interior volume of a conduit containing therein at least one gas line is maintained at reduced pressure as one end of the gas line connects to a gas source and another end of the gas line connects to a point of use. By using a conduit to enclose the individual gas lines and using a single feed line for each gas, the embodiments disclosed herein reduce the number of individual gas lines that need to be run through a facility.

Abstract: A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas panel, and exhaust gases from the reactor are used to purge the gas panel. Gases from the reactor may be cooled before flowing to the gas panel.

Abstract: Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.