Abstract: This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that are spatially separated from each other up until they impinge on a growth substrate and that have volumes adequate for high-volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chambers without hindering the operation of mechanical and robot substrate-handling equipment used with such chambers. This invention is useful for the high-volume growth of numerous elemental and compound semiconductors, and particularly useful for the high-volume growth of Group III-V compounds and GaN.

Abstract: This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN.

Abstract: A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.

Abstract: A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.

Abstract: A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.

Abstract: A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.

Abstract: A dual-arm wafer hand-off assembly includes a pair of pickup arms for transferring wafers within a wafer processing system. The two pickup arms are adapted to move such that the wafer on one of the arms can be positioned over the other arm and handed off. In one version, a Bernoulli-style wand translates along a linear guideway and may be positioned over a paddle-style pickup arm. The wafer carried by the Bernoulli wand can be handed off to the paddle by shutting off the flow of gas from the Bernoulli wand jets. The two pickup arms may be mounted on linear slides and adapted to translate between a load/unload chamber and a processing chamber, or the guideway may be adapted to rotate to allow transfer of wafers to multiple processing chambers in a cluster system. One of the pickup arms is preferably an all-quartz Bernoulli-style pickup arm having a proximal arm portion and a distal wand.

Abstract: A dual-arm wafer hand-off assembly includes a pair of pickup arms for transferring wafers within a wafer processing system. The two pickup arms are adapted to move such that the wafer on one of the arms can be positioned over the other arm and handed off. In one version, a Bernoulli-style wand translates along a linear guideway and may be positioned over a paddle-style pickup arm. The wafer carried by the Bernoulli wand can be handed off to the paddle by shutting off the flow of gas from the Bernoulli wand jets. The two pickup arms may be mounted on linear slides and adapted to translate between a load/unload chamber and a processing chamber, or the guideway may be adapted to rotate to allow transfer of wafers to multiple processing chambers in a cluster system. One of the pickup arms is preferably an all-quartz Bernoulli-style pickup arm having a proximal arm portion and a distal wand.

Abstract: A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.

Abstract: A platform is held atop a vertically moveable dual position leveling base by three draw screws, three push screws, and three spring-loaded pins. The leveling base is configured to secure and orient the platform such that an upper surface of the platform is substantially horizontal with allowance for adjustments in each of two positions. The platform is pushed upwardly relative to the base by the spring-loaded pins. The orientation of the platform in one position is adjusted by the three draw screws, which pull the platform down against the upward force of the spring-loaded pins. The base also has an upper position in which the platform is pressed into sealing engagement with a lower mating surface of a chamber. Three adjustable push screws provide the desired platform orientation by limiting the movement of the platform towards the base.

Abstract: A system for facilitating wafer transfer comprises a susceptor unit consisting of an inner susceptor section which rests within an outer susceptor section. A vertically movable and rotatable support spider located beneath the susceptor unit can rotate into positions to engage either the inner or the outer susceptor sections. When the inner section is engaged, the support spider lifts the inner section vertically out of the outer section. When the outer section is engaged, the support spider raises and lowers the entire susceptor unit. A robotic arm end effector engaging only the lower surface of the outer edge of the wafer permits hot wafer pick-up and unloading by the inner susceptor section. Several end effectors are disclosed that minimize non-uniform thermal effect on the substrate.

Abstract: A dual-arm wafer hand-off assembly includes a pair of pickup arms for transferring wafers within a wafer processing system. The two pickup arms are adapted to move such that the wafer on one of the arms can be positioned over the other arm and handed off. In one version, a Bernoulli-style wand translates along a linear guideway and may be positioned over a paddle-style pickup arm. The wafer carried by the Bernoulli wand can be handed off to the paddle by shutting off the flow of gas from the Bernoulli wand jets. The two pickup arms may be mounted on linear slides and adapted to translate between a load/unload chamber and a processing chamber, or the guideway may be adapted to rotate to allow transfer of wafers to multiple processing chambers in a cluster system. One of the pickup arms is preferably an all-quartz Bernoulli-style pickup arm having a proximal arm portion and a distal wand.

Abstract: A dual-arm wafer hand-off assembly includes a pair of pickup arms for transferring wafers within a wafer processing system. The two pickup arms are adapted to move such that the wafer on one of the arms can be positioned over the other arm and handed off. In one version, a Bernoulli-style wand translates along a linear guideway and may be positioned over a paddle-style pickup arm. The wafer carried by the Bernoulli wand can be handed off to the paddle by shutting off the flow of gas from the Bernoulli wand jets. The two pickup arms may be mounted on linear slides and adapted to translate between a load/unload chamber and a processing chamber, or the guideway may be adapted to rotate to allow transfer of wafers to multiple processing chambers in a cluster system. One of the pickup arms is preferably an all-quartz Bernoulli-style pickup arm having a proximal arm portion and a distal wand.

Abstract: A dual-arm wafer hand-off assembly includes a pair of pickup arms for transferring wafers within a wafer processing system. The two pickup arms are adapted to move such that the wafer on one of the arms can be positioned over the other arm and handed off. In one version, a Bernoulli-style wand translates along a linear guideway and may be positioned over a paddle-style pickup arm. The wafer carried by the Bernoulli wand can be handed off to the paddle by shutting off the flow of gas from the Bernoulli wand jets. The two pickup arms may be mounted on linear slides and adapted to translate between a load/unload chamber and a processing chamber, or the guideway may be adapted to rotate to allow transfer of wafers to multiple processing chambers in a cluster system. One of the pickup arms is preferably an all-quartz Bernoulli-style pickup arm having a proximal arm portion and a distal wand.

Abstract: A gas curtain for use with a semiconductor processing system to prevent unwanted gases from entering a processing chamber. The gas curtain includes both upward and downward flows of gas surrounding an isolation valve adjacent a delivery port into the processing chamber. In the valve open position, the downward flows extends between the valve and the delivery port, and the upward flow extends in an opposite direction behind the isolation valve. In the valve closed position, one of the flows extends through a slot in the isolation valve, while the other flow is directed in an opposite direction on the rear side of the isolation valve. In a method of using the gas curtain apparatus, a pick-up wand operating on a Bernoulli principal uses gases which are unwanted in the processing chamber, and just prior to loading wafers into the processing chamber, the gas flow in the Bernoulli wand is switched from a first gas to a second gas. Desirably, the second gas is hydrogen.

Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.

Abstract: An improved wafer handling system including a pair of robot arms each having a drive apparatus operatively coupled to its rear end portion for extending, retracting, and rotatably positioning the robot arms. The opposite end of the robot arms are operatively connected to a pick-up wand. The pick-up wand includes a top plate and a bottom plate. The lower surface of the top plate has a plurality of commonly-connected grooves ground therein and a reservoir for supplying gas to said grooves from the forward end portion of the robot arms. A plurality of gas outlets are provided in the bottom plate, and the bottom surface of the top plate is positioned securely over and flush against the top surface of the bottom plate such that at least one of the grooves are over each of the plurality of gas outlets for delivering gas thereto.

Abstract: A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.

Abstract: Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.