Abstract: A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.

Abstract: A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.

Abstract: A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface.

Abstract: A method for predicting the performance of tubular goods includes using a computer readable three-dimensional representation of tubular good which includes computer readable measurements of discrete segments of the wall of said tubular acquired by ultrasonic detection means, along with associated data representing the position of discrete segment and optionally ovality data to mathematically calculate, by computer means, the effect of stress conditions, including tensile, bending, collapse, burst and aging forces upon said tubular and optionally analyzing sequential inspection of the same tubular good over a period of time predict when failure is likely to occur, and to avoid failure while maximizing the use of the tubular good.

Abstract: A method for predicting the performance of tubular goods includes using a computer readable three-dimensional representation of tubular good which includes computer readable measurements of discrete segments of the wall of said tubular acquired by ultrasonic detection means, along with associated data representing the position of discrete segment and optionally ovality data to predict the effect of stress conditions, including tensile, bending, collapse, burst and aging forces upon said tubular and optionally analyzing sequential inspection of the same tubular good over a period of time predict when failure is likely to occur, and to avoid failure while maximizing the use of the tubular good.

Abstract: A method for predicting the performance of tubular goods includes using a computer readable three-dimensional representation of tubular good which includes computer readable measurements of discrete segments of the wall of said tubular acquired by ultrasonic detection means, along with associated data representing the position of discrete segment and optionally ovality data to predict the effect of stress conditions, including tensile, bending, collapse, burst and aging forces upon said tubular and optionally analyzing sequential inspection of the same tubular good over a period of time predict when failure is likely to occur, and to avoid failure while maximizing the use of the tubular good.

Abstract: A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface.

Abstract: A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface.

Abstract: A method for inspection of tubular goods includes using ultrasonic detection means to obtain wall thickness measurement of discrete sections of a tubular good and recording each measurement in association with both the longitudinal and circumferential position at which each measurement was obtained. Accordingly each measurement of wall thickness represents a small portion of the wall thickness of said tubular in three dimensional space. A plurality of said measurements may thereby be displayed by computer means in virtual three dimensional format. Differing wall thickness readings made be represented by different shading or color display, so that anomalies of interest may be readily detected. Alternatively the recorded information may be readily processed by computer means to calculate the effect of stressors on the wall of said tubular good.

Abstract: A method for inspection of tubular goods includes using ultrasonic detection means to obtain wall thickness measurement of discrete sections of a tubular good and recording each measurement in association with both the longitudinal and circumferential position at which each measurement was obtained. Accordingly each measurement of wall thickness represents a small portion of the wall thickness of said tubular in three dimensional space. A plurality of said measurements may thereby be displayed by computer means in virtual three dimensional format. Differing wall thickness readings made be represented by different shading or color display, so that anomalies of interest may be readily detected. Alternatively the recorded information may be readily processed by computer means to calculate the effect of stressors on the wall of said tubular good.

Abstract: A method for inspection of tubular goods includes using ultrasonic detection means to obtain wall thickness measurement of discrete sections of a tubular good and recording each measurement in association with both the longitudinal and circumferential position at which each measurement was obtained. Accordingly each measurement of wall thickness represents a small portion of the wall thickness of said tubular in three dimensional space. A plurality of said measurements may thereby be displayed by computer means in virtual three dimensional format. Differing wall thickness readings made be represented by different shading or color display, so that anomalies of interest may be readily detected. Alternatively the recorded information may be readily processed by computer means to calculate the effect of stressors on the wall of said tubular good.

Abstract: A method for inspection of tubular goods includes using ultrasonic detection means to obtain wall thickness measurement of discrete sections of a tubular good and recording each measurement in association with both the longitudinal and circumferential position at which each measurement was obtained. Accordingly each measurement of wall thickness represents a small portion of the wall thickness of said tubular in three dimensional space. A plurality of said measurements may thereby be displayed by computer means in virtual three dimensional formal. Differing wall thickness readings made he represented by different shading or color display, so that anomalies of interest may be readily detected. Alternatively the recorded information may be readily processed by computer means to calculate the effect of stressors on the wall of said tubular good.

Abstract: A method of forming an avalanche trench optical detector device on a semiconductor substrate, comprising forming a first set and a second set of trenches in the substrate, wherein trenches of the first set are alternately disposed with respect to trenches of the second set, filling the trenches with a doped sacrificial material, and annealing the device to form a multiplication region in the substrate. The method comprises etching the doped sacrificial material from the first set of trenches, filling the first set of trenches with a doped material of a first conductivity, etching the doped sacrificial material from a second set of trenches, and filling the second set of trenches with a doped material of a second conductivity. The method further comprises providing separate wiring connections to the first set of trenches and the second set of trenches.

Abstract: A photodetector (and method for producing the same) includes a semiconductor substrate, a buried insulator formed on the substrate, a buried mirror formed on the buried insulator, a semiconductor-on-insulator (SOI) layer formed on the conductor, alternating n-type and p-type doped fingers formed in the semiconductor-on-insulator layer, and a backside contact to one of the p-type doped fingers and the n-type doped fingers.

Abstract: A photodetector (and method for producing the same) includes a semiconductor substrate, a buried insulator formed on the substrate, a buried mirror formed on the buried insulator, a semiconductor-on-insulator (SOI) layer formed on the conductor, alternating n-type and p-type doped fingers formed in the semiconductor-on-insulator layer, and a backside contact to one of the p-type doped fingers and the n-type doped fingers.

Abstract: A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.

Abstract: A monolithic semiconductor optical detector is formed on a substrate having a plurality of substantially parallel trenches etched therein. The trenches are further formed as a plurality of alternating N-type and P-type trench regions separated by pillar regions of the substrate which operate as an I region between the N and P trench regions. First and second contacts are formed on the surface of the substrate and interconnect the N-type trench regions and the P-type trench regions, respectively. Preferably, the trenches are etched with a depth comparable to an optical extinction length of optical radiation to which the detector is responsive.

Abstract: A low noise, high gain-bandwidth preamplifier is formed which employs positive, capacitive feedback to compensate the frequency response of the amplifier for an applied input capacitance. The circuit includes a differential amplifier circuit with conventional resistive, negative feedback. The circuit further includes a pair of compensating capacitors coupled across the amplifier, providing positive feedback which compensates for an applied input capacitance. The preamplifier circuit provides a high gain-bandwidth along with enhanced noise performance.

Abstract: A circuit that can switch between a peak detect and an averaging mode is described. In a preferred embodiment, when the circuit is in a peak detect mode a first transistor is on and a second is off, enabling an amplifier in the circuit to produce a signal representative of the peak value of an input signal. In an averaging mode, the first transistor is off, and a second transistor turns on, disabling the output of the amplifier, and thus enabling the averaging mode components of the invention.

Abstract: Methods, apparatus and manufacturing processes are set forth which reduce the affects of scattered light in electro-optical devices, fiber optic links, etc., through the use of radiation sensitive compounds which, for example, can be easily applied to a semiconductor wafer when fabricating a solid state integrated receiver. According to the invention, a given radiation sensitive compound is transformed into a light blocking material (i.e., a material that will not transmit light) as a result of a lithographic (and in some cases a photolithographic) process. The resultant blocking material may be easily removed from any regions which is designed to receive transmitted light (for example, detector regions); while any other light sensitive regions remain covered (i.e., are protected) by the blocking material at the conclusion of the process.