Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4<n and x?0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.

Abstract: The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

Abstract: The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

Abstract: An in situ cleaning system is disclosed for use with semiconductor processing equipment. In accordance with an important aspect of the invention, the cleaning system provides for dynamic cleaning of the semiconductor processing system by varying the pressure of the cleaning gas over time during a cleaning cycle. In particular, the cleaning gas is applied to the semiconductor processing system in repeated pressure cycles. Each pressure cycle begins with the pressure of the cleaning gas at PMIN. The pressure of the cleaning gas is increased to a maximum pressure PMAX during a fill portion of the pressure cycle and maintained for a dwell time selected to allow the available reactants to generate the desired end products. The pressure in the chamber to be cleaned is then reduced during a vent portion of the pressure cycle to permit venting of the reaction products.

Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4?n, and x?0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.