Abstract: The present invention relates to a circuit for converting between an analog input voltage and a corresponding digital representation of the analog input voltage. First, second and third capacitors are used, the first and second capacitors being matched, the third capacitor serving as an accumulator. A first switch is coupled to one end of the first capacitor, and a second switch is coupled between the one end of the first capacitor and one end of the second capacitor. A third switch coupled between the one end of the second capacitor and one end of the third capacitor, with a discharge circuit being coupled between the one end of the third capacitor and an opposite end of the second capacitor. When the third switch is closed the discharge circuit fully discharges the second capacitor onto the third capacitor.

Abstract: The present invention relates to a circuit for converting between an analog input voltage and a corresponding digital representation of the analog input voltage. First, second and third capacitors are used, the first and second capacitors being matched, the third capacitor serving as an accumulator. A first switch is coupled to one end of the first capacitor, and a second switch is coupled between the one end of the first capacitor and one end of the second capacitor. A third switch coupled between the one end of the second capacitor and one end of the third capacitor, with a discharge circuit being coupled between the one end of the third capacitor and an opposite end of the second capacitor. When the third switch is closed the discharge circuit fully discharges the second capacitor onto the third capacitor.

Abstract: A multiplier and corresponding method are provided for amplifying a voltage difference between a first input voltage and a second input voltage, the multiplier being implemented with Bipolar Junction Transistor technology having high emitter resistance. The multiplier includes a first bipolar input transistor having high emitter resistance that receives the first input voltage and a second bipolar input transistor having high emitter resistance that receives the second input voltage. The multiplier also includes a first current source for generating a first current that flows through said first bipolar input transistor, a current mirror for producing a second current that is substantially equal to said first current and flows through said second bipolar input transistor.

Abstract: A supply and temperature dependent linear signal generating circuit includes four transistors each having a unique current flowing therethrough and connected together to form a current multiplier. A first one of the currents is designed to be supply dependent and preferably adjustable in magnitude, a second one is designed to exhibit a specific temperature dependence, the third is designed to be both supply and temperature independent and the fourth current is defined as a ratio of the first three. The fourth current is, in one embodiment, impressed upon a network defined by a resistor divider and a voltage source to thereby define an output voltage V(T) that is both supply and temperature dependent according to the following equation:V(T)=KX*(T-TN),wherein KX is the slope of V(T) over temperature, T is the operating temperature and TN is a reference temperature at which V(T) is equal to zero. Preferably, TN is adjustable via the adjustable magnitude of the first current.

Abstract: In accordance with the teachings of the present invention, a programmable integrated transducer amplifier circuit is provided which receives differential outputs from a transducer, such as a pressure or accelerometer transducer. The programmable integrated transducer amplifier circuit includes binary adjustable circuits that are programmed in response to binary coded signals. The binary adjustable circuits generate binary weighted currents that are employed to adjust the operating characteristics of the amplifier circuit. The binary coded signals are received from a programmable memory array which includes a plurality of memory cells that store binary information. Each of the memory cells are programmed when coupled to a programming signal. Additionally, the memory array has pretest capability for testing outputs of the memory cells prior to permanently programming the respective memory cells.

Abstract: A memory cell having programming voltage margin verification is provided. The memory cell includes a voltage comparator having a differential input with first and second inputs and bias circuitry for generating a differential input voltage. A voltage offset is applied to the second input of the comparator to provide an input offset voltage. A programming voltage is received for programming the memory cell and the memory cell provides an output signal. To verify an unprogrammed state voltage margin of the memory cell, a margin detection circuitry receives a verification check signal and the output is monitored to determine whether the unprogrammed state voltage margin is proper. To verify a proper programmed state voltage margin of the memory cell, current is sensed through the programming input and a determination of a proper programmed state voltage margin is determined as a function of the sensed current.

Abstract: An analog voltage address decoder circuit and stackable voltage comparator circuit are provided. The address decoder circuit has a column decode comparator network made up of a first plurality of interconnected comparator circuits and a row decode comparator network made up of a second plurality of interconnected comparator circuits. The column decode comparator network compares a plurality of reference voltages with an analog input voltage so as to detect if the analog input voltage is within a bounded window. Likewise, the row decode comparator network compares an analog input voltage with a plurality of reference voltages to detect if the analog input voltage is within a bounded window. Detection within the proper bounded windows for the rows and columns produces a corresponding "high" binary output to a particular memory location for access thereto. The decode comparator networks use stackable voltage comparator circuits to perform the voltage window comparisons.