Abstract: A WIM system for detecting loads of vehicles on a roadway segment when a crossing wheel of a vehicle crosses a WIM sensor includes a WIM sensor arranged in the roadway segment and having a section that is flush with the roadway surface. The WIM sensor includes an elongated profile extending along a longitudinal axis and defining at least one space in which is arranged at least one force sensor, which is configured to generate a force sensor signal that corresponds to a dynamic ground reaction force to the crossing wheel. The WIM system includes at least one acceleration sensor that detects an acceleration of the road surface of the roadway segment in which the WIM sensor is arranged in at least one spatial direction and that accordingly provides an acceleration sensor signal indicative of the deflection of the roadway segment along the one spatial direction.

Abstract: A WIM system for detecting loads of vehicles on a roadway segment when a crossing wheel of a vehicle crosses a WIM sensor includes a WIM sensor arranged in the roadway segment and having a section that is flush with the roadway surface. The WIM sensor includes an elongated profile extending along a longitudinal axis and defining at least one space in which is arranged at least one force sensor, which is configured to generate a force sensor signal that corresponds to a dynamic ground reaction force to the crossing wheel. The WIM system includes at least one acceleration sensor that detects an acceleration of the road surface of the roadway segment in which the WIM sensor is arranged in at least one spatial direction and that accordingly provides an acceleration sensor signal indicative of the deflection of the roadway segment along the one spatial direction.

Abstract: A WIM system for detecting loads of vehicles on a roadway segment when a crossing wheel of a vehicle crosses a WIM sensor includes a WIM sensor arranged in the roadway segment and having a section that is flush with the roadway surface. The WIM sensor includes an elongated profile extending along a longitudinal axis and defining at least one space in which is arranged at least one force sensor, which is configured to generate a force sensor signal that corresponds to a dynamic ground reaction force to the crossing wheel. The WIM system includes at least one acceleration sensor that detects an acceleration of the road surface of the roadway segment in which the WIM sensor is arranged in at least one spatial direction and that accordingly provides an acceleration sensor signal indicative of the deflection of the roadway segment along the one spatial direction.

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).