Abstract: The variability of an etchant concentration in an immersion processes for treatment of semiconductor devices can be significantly lowered by continuously measuring the conductivity of an etchant solution and comparing against predetermined thresholds. The etchant concentration can be maintained by a feed and bleed process based on conductivity measurements of the etchant solution and the conductivity measurements being correlated with premeasured pH values of an etchant solution.

Abstract: The variability of an etchant concentration in an immersion processes for treatment of semiconductor devices can be significantly lowered by continuously measuring the conductivity of an etchant solution and comparing against predetermined thresholds. The etchant concentration can be maintained by a feed and bleed process based on conductivity measurements of the etchant solution and the conductivity measurements being correlated with premeasured pH values of an etchant solution.

Abstract: A conductivity sensor, a system for processing flat articles that includes a conductivity sensor, and a method of measuring conductivity of a fluid in a semiconductor processing system. The conductivity sensor includes a probe portion and a data analysis portion that are operably coupled together. The probe portion includes a housing extending along a longitudinal axis, a first tube extending through and protruding from the housing, and a second tube extending through and protruding from the housing. A first toroid surrounds the first tube within the cavity of the housing and a second toroid surrounds the second tube within the cavity of the housing. The first toroid may be operably coupled to an alternating current source of the data analysis portion and the second toroid may be operably coupled to a receiver of the data analysis portion.

Abstract: A steering rack having a toothed member and a base body each extending along longitudinal axis comprising: a toothed region disposed on the toothed member extending along the longitudinal axis; a first contact area disposed on the tooth member extending along the longitudinal axis; a first toothed member end area disposed at a first longitudinal end of the toothed member and a second toothed member end area disposed at a second longitudinal end of the toothed member; a receptacle disposed on the base body, the receptacle configured to accept the toothed member; a second contact area disposed on the base body extending along the longitudinal axis, the first and second contact areas being attached to each other; and a first receptacle end area disposed on the base member at a first longitudinal end of the receptacle and a second receptacle end area at a second longitudinal end of the receptacle, wherein the first receptacle end area and the first toothed member end area are attached to each other, and wherein t

Abstract: The variability of an etchant concentration in an immersion processes for treatment of semiconductor devices can be significantly lowered by continuously measuring the conductivity of an etchant solution and comparing against predetermined thresholds. The etchant concentration can be maintained by a feed and bleed process based on conductivity measurements of the etchant solution and the conductivity measurements being correlated with premeasured pH values of an etchant solution.

Abstract: The variability of an etchant concentration in an immersion processes for treatment of semiconductor devices can be significantly lowered by continuously measuring the conductivity of an etchant solution and comparing against predetermined thresholds. The etchant concentration can be maintained by a feed and bleed process based on conductivity measurements of the etchant solution and the conductivity measurements being correlated with premeasured pH values of an etchant solution.

Abstract: The variability of an etchant concentration in an immersion processes for treatment of semiconductor devices can be significantly lowered by continuously measuring the conductivity of an etchant solution and comparing against predetermined thresholds. The etchant concentration can be maintained by a feed and bleed process based on conductivity measurements of the etchant solution and the conductivity measurements being correlated with premeasured pH values of an etchant solution.

Abstract: A method for consistently texturizing silicon wafers dating solar cell wet chemical processing. In one aspect, the invention includes submerging a batch of silicon wafers within a process chamber having an alkaline solution mixture therein. The invention utilizes a feed and bleed technique to bleed chemicals from the process chamber and introduce fresh chemicals into the process chamber to maintain chemical concentrations within a desired range and to maintain etch by-products below a threshold. The alkaline solution etches the silicon wafers to texturize the surfaces of the silicon wafers to form a pattern of pyramids (i.e., texturization pattern) on the surface of the silicon wafers. The feed and bleed technique enables the texturization pattern on the surfaces of the processed wafers and the reflectance of the processed wafers to be consistent among different batches of silicon wafers that are submerged into the alkaline mixture in the process chamber.

Abstract: A system and method for rinsing substrates. In one embodiment, method comprises: a) providing a fixed volume of a rinse fluid in a rinse tool comprising a closed-loop fluid-circuit comprising a rinse tank, a deionizer, a pump, and a recirculation line fluidly coupled to an outlet of the rinse tank and an inlet of the rinse tank; and b) performing a plurality of rinse cycles in the rinse tool, each of the plurality of rinse cycles including: b-1) positioning a batch of substrates in the rinse tank; b-2) circulating the fixed volume of the rinse fluid through the fluid circuit for a rinse time, wherein during said circulation the rinse fluid contacts the batch of substrates, thereby becoming ionically contaminated rinse fluid, the deionizer removing ionic impurities from the ionically contaminated rinse fluid to produce deionized rinse fluid; and b-3) removing the batch of substrates from the rinse tank.

Abstract: A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

Abstract: A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.

Abstract: A method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; supplying a process gas under pressure to a remaining volume of the process tank; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. Preferably, the process liquid is ozonated deionized water and the process gas is ozone.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein pressure in excess of one atmosphere is applied to ozone, followed by a mixing of the ozone with deionized water via a series of nozzles, and finally where the semiconductor wafers having at least one layer of photoresist are exposed to the mixture of ozone and deionized water. The temperature during the process is maintained at above ambient temperatures of 20-21° C. or 70° F.

Abstract: A process tank and method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank.

Abstract: A process tank for stripping photoresist from semiconductor wafers. In one aspect the invention is a process tank having a process chamber, means to support at least one wafer in the processing chamber, means for supplying a process liquid to the chamber, a lid adapted to close the chamber, a liquid level sensor adapted to stop the supply of process liquid to the chamber when the process liquid fills the chamber to a predetermined level below a wafer supported in the processing chamber, an acoustical energy source adapted to supply acoustical energy to process liquid located in the chamber so as to create a mist of the process liquid in the processing chamber, and means to supply a process gas to the chamber, the process gas supply means being located above the predetermined level and adapted to supply process gas to the chamber under pressure during mist creation.

Abstract: A process tank and method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank.