Patents by Inventor Dennis P. Hogan
Dennis P. Hogan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9146090Abstract: Methods and apparatus for adjusting an alignment of a movable component relative to a substrate holder. An alignment tool is placed on the substrate holder. A nozzle is coupled with the movable component. The movable component and the nozzle are positioned such that a planar surface of the movable component contact a planar surface of the alignment tool, and the nozzle has a non-contacting relationship with the alignment tool. The planar surface of the movable component is leveled to be parallel with the planar surface of the alignment tool.Type: GrantFiled: November 14, 2013Date of Patent: September 29, 2015Assignee: GLOBALFOUNDRIES INC.Inventors: Jeffrey J. Grimes, Dennis P. Hogan
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Publication number: 20150128436Abstract: Methods and apparatus for adjusting an alignment of a movable component relative to a substrate holder. An alignment tool is placed on the substrate holder. A nozzle is coupled with the movable component. The movable component and the nozzle are positioned such that a planar surface of the movable component contact a planar surface of the alignment tool, and the nozzle has a non-contacting relationship with the alignment tool. The planar surface of the movable component is leveled to be parallel with the planar surface of the alignment tool.Type: ApplicationFiled: November 14, 2013Publication date: May 14, 2015Applicant: International Business Machines CorporationInventors: Jeffrey J. Grimes, Dennis P. Hogan
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Patent number: 8536025Abstract: A resized wafer using a negative photoresist ring, methods of manufacture and design structures thereof are disclosed. The method includes forming a ring within a radius of a wafer. The method also includes patterning a photoresist formed on the wafer, by exposing the photoresist to energy. Additionally, the method includes forming troughs in a substrate of the wafer based on the patterning of the photoresist, wherein the ring blocks formation of the troughs underneath the ring. The method also includes filling the troughs with a metal and resizing the wafer at an area of the ring.Type: GrantFiled: December 12, 2011Date of Patent: September 17, 2013Assignee: International Business Machines CorporationInventors: Dennis P. Hogan, Gregory S. Jankowski, Robert K. Leidy
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Publication number: 20130147056Abstract: A resized wafer using a negative photoresist ring, methods of manufacture and design structures thereof are disclosed. The method includes forming a ring within a radius of a wafer. The method also includes patterning a photoresist formed on the wafer, by exposing the photoresist to energy. Additionally, the method includes forming troughs in a substrate of the wafer based on the patterning of the photoresist, wherein the ring blocks formation of the troughs underneath the ring. The method also includes filling the troughs with a metal and resizing the wafer at an area of the ring.Type: ApplicationFiled: December 12, 2011Publication date: June 13, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dennis P. HOGAN, Gregory S. JANKOWSKI, Robert K. LEIDY
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Patent number: 6348100Abstract: A method of processing a substrate. A polymer is applied to a substrate. A portion of the polymer is not retained on the substrate and is collected by a catch basin. The catch basin is cleaned by exposing the catch basin and collected polymer to a material comprising acetic acid.Type: GrantFiled: July 1, 1999Date of Patent: February 19, 2002Assignee: International Business Machines CorporationInventors: Scott A. Cummings, Dennis P. Hogan, Alfred A. Rouleau, III
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Patent number: 5998569Abstract: A composition of matter comprising a polyamic acid/ester having an amide pendant group directly substituting an acid site of the polyamic acid is provided, which composition when cured provides a colored polymer film when the amide group is a chromophore. The resulting polymer which may be applied as a film to semiconductor chips to provide an optically sensitive semiconductor chip comprises a partially imidized polyamic acid wherein an amide pendant group is directly attached to one acid moiety of the polyamic acid and the other acid group imidized with the adjacent amino group of the polyamic acid. The polymers are useful as optical filters on semiconductor chips and for photoresist applications.Type: GrantFiled: March 17, 1998Date of Patent: December 7, 1999Assignee: International Business Machines CorporationInventors: Dennis P. Hogan, Harold G. Linde
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Patent number: 5539080Abstract: A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.Type: GrantFiled: April 19, 1995Date of Patent: July 23, 1996Assignee: International Business Machines CorporationInventors: Dennis P. Hogan, Harold G. Linde, Ronald A. Warren
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Patent number: 5536792Abstract: A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.Type: GrantFiled: April 19, 1995Date of Patent: July 16, 1996Assignee: International Business Machines CorporationInventors: Dennis P. Hogan, Harold G. Linde, Ronald A. Warren
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Patent number: 5441797Abstract: A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. C. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.Type: GrantFiled: September 30, 1994Date of Patent: August 15, 1995Assignee: International Business Machines CorporationInventors: Dennis P. Hogan, Harold G. Linde, Ronald A. Warren
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Patent number: 5397684Abstract: A process is disclosed for making circuit elements by photolithography comprising depositing an antireflective polyimide or polyimide precursor layer on a substrate and heating the substrate at 200.degree. C. to 500.degree. to provide a functional integrated circuit element that includes an antireflective polyimide layer. The antireflective polyimide layer contains a sufficient concentration of at least one chromophore to give rise to an absorbance sufficient to attenuate actinic radiation at 405 or 436 nm. Preferred chromophores include those arising from perylenes, naphthalenes and anthraquinones. The chromophore may reside in a dye which is a component of the polyimide coating mixture or it may reside in a residue which is incorporated into the polyimide itself.Type: GrantFiled: April 27, 1993Date of Patent: March 14, 1995Assignee: International Business Machines CorporationInventors: Dennis P. Hogan, Harold G. Linde, Ronald A. Warren