Abstract: The power-on-reset test circuit of this invention includes two imbalanced latches to detect the occurrence of a transient power-on-reset signal. The occurrence of a transient power-on-reset signal is latched for later verification during circuit testing. Both latches are designed to default to a low voltage output (Vss) on initial power-up. One of the latches is set by the power-on-reset signal to a high-voltage output (Vcc) state. The other latch is set by a reference-potential input to a low-voltage output state. If the set latch has a high-voltage output and the other latch has a low-voltage output, then the power-on-reset circuitry is functioning properly.

Abstract: An array source signal discharge controller device (10) includes a pulse converter circuit (12) that receives an erase pulse signal (ERPULSE). The pulse converter circuit (12) converts the erase pulse signal (ERPULSE) into a pulse control signal (ERPCL) that is subsequently translated into a higher voltage level bias signal (ECL.sub.--). The higher voltage level bias signal (ECL.sub.--) drives array source signal generator circuits (16) that produce array source signals (AS) to erase particular array subsections of memory as determined by a selection circuit (17). The array source signal generator circuits (16) also generate array source command signals (ASCOM.sub.--) to indicate a discharging status of all array source signals (AS). An erase completion detector circuit (18) monitors the array source command signals (ASCOM.sub.--) and generates an array source detect signal (ASDET) to indicate completion of array source signal (AS) discharging.

Abstract: The CMOS high-voltage sensor circuit has a voltage reference including, for example, of four N-channel MOS transistors; one pass-gate P-channel transistor; one current-mirror P-channel MOS transistor; and a conventional high-voltage sensor including, for example, of two P-channel MOS transistors and one N-channel MOS transistor. The sensor circuit of this invention generates a high-voltage signal at the output if the input voltage is greater than both the reference voltage plus two P-channel threshold voltages and the supply voltage Vcc plus two P-channel threshold voltages. The power-up or power-down sequence may be in any order without adversely affecting the operation of the circuit of this invention.

Abstract: The power-on reset circuit of this invention includes a current-sensing circuit, a pulse-stretching circuit, and a voltage-reference circuit. The voltage-reference circuit consists, for example, of one N-Channel and one P-Channel MOS transistor. The circuit of this invention uses a static voltage reference comprised of CMOS transistors to detect the power-up condition. The circuit of this invention improves detection of a transient power-supply voltage Vcc loss and detects that power-supply voltage transient on both rising and falling edges.

Abstract: The column-line short detection circuit of this invention includes a special test circuit that turns off wordlines (15), a N-channel transistor (23) for each column line (18), a decoder (19a) that uses only the least significant column address (20d) for input to the test circuit, and a sensor (SA) to detect current between shorted column lines (18). Because the column-line short detection circuit of this invention uses only the least significant address as input for column decoder (19a), it requires a very small number of transistors.

Abstract: Resistors are used as controlling devices to control the rate at which output buffer transistors are turned OFF and ON to control transient noise.