Abstract: A thermal system includes a base member, a two-phase fluid, a tuning heater, and a chuck. The base member includes at least one fluid passageway. The two-phase fluid is disposed within the fluid passageway. A pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning heater is secured to the base member. The chuck is secured to the tuning heater opposite to the base member. The tuning heater includes a plurality of zones to fine tune a heat distribution provided by the base member to the chuck.

Abstract: A thermal system includes: a base member including at least one fluid passageway in which a two-phase fluid is disposed; a tuning layer secured to the base member; and a control system. The pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning layer includes a plurality of zones. The control system includes a plurality of sets of power lines in communication with the tuning layer, and a plurality of addressable control elements in electrical communication with the power lines and with the tuning layer. The control elements provide selective control of the tuning layer zones.

Abstract: A thermal system includes a base member, a two-phase fluid, a tuning heater, and a chuck. The base member includes at least one fluid passageway. The two-phase fluid is disposed within the fluid passageway. A pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning heater is secured to the base member. The chuck is secured to the tuning heater opposite to the base member. The tuning heater includes a plurality of zones to fine tune a heat distribution provided by the base member to the chuck.

Abstract: A thermal system includes: a base member including at least one fluid passageway in which a two-phase fluid is disposed; a tuning layer secured to the base member; and a control system. The pressure of the two-phase fluid is controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. The tuning layer includes a plurality of zones. The control system includes a plurality of sets of power lines in communication with the tuning layer, and a plurality of addressable control elements in electrical communication with the power lines and with the tuning layer. The control elements provide selective control of the tuning layer zones.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract: An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.

Abstract: An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.

Abstract: A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

Abstract: An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

Abstract: An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: A conduit has a heating system disposed therein. The heating system generates heat in response to magnetic flux generated by an inductive coil. The heating system has a heat transfer element and a plurality of ferromagnetic elements. The heat transfer element may be displaced within the conduit to control the amount of heat generated.

Abstract: A method of fabricating an electrostatic chuck capable of holding a substrate in a chamber comprises forming an at least partially sintered dielectric insert, forming a dielectric preform comprising an electrode and a gas conduit, and placing the dielectric insert in the gas conduit of the dielectric preform, and sintering the dielectric preform and the dielectric insert.

Abstract: An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

Abstract: Generally, an electrostatic chuck having a dielectric coating is provided. In one embodiment, an electrostatic chuck includes a support surface, a mounting surface disposed opposite the support surface and at least one side separating the support surface and the mounting surface which defines a support body. One or more conductive members are disposed within the support body to generate an electrostatic attraction between the body and a substrate disposed thereon. A dielectric coating is disposed on the mounting surface of the support body to minimize undesired current leakage therethrough. Optionally, the dielectric coating may be additionally disposed on one or more of the sides and/or the support surface.

Abstract: A process chamber 110 capable of processing a substrate 30 in a plasma of process gas. The chamber 110 comprises a support 200 having a dielectric 210 covering an electrode 220 and a conductor 230 below the electrode 220. A voltage supply 180 supplies a gas energizing voltage to the conductor 220, and the conductor is adapted to capacitively couple the voltage to the electrode 220 to energize the process gas. Alternatively, the voltage may be supplied to the electrode 220 through a connector 195 which can capacitively couple with the conductor 230. A DC power supply 190 may also provide an electrostatic chucking voltage to the electrode 220. In one version, the conductor 230 comprises an interposer 280.

Abstract: A chamber 30 for processing a substrate 25 comprises a support 55 comprising a dielectric 60 enveloping an electrode 70. The electrode 70 may be chargeable to electrostatically hold the substrate 25 or may be chargeable to form an energized gas in the chamber 30 to process the substrate 25. A base 130 is below the support 55, and a compliant member 300 is positioned between the support 55 and the base 130. The compliant member 300 may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric 60 and the base 130.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract: A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

Abstract: An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.