Abstract: A self-aligned method of forming contacts to a transistor gate, source and drain reduces the required spacing between the nominal center of the gate and electrode at little cost in process complexity by the provision of a sidewall positioned above the LDD-defining sidewall and extending above the top Of the gate by a buffer amount sufficient to protect the gate during the process of opening a source or drain contact.

Abstract: A process for the preparation of oriented, ceramic oxides from a bilayer structure of a polycrystalline superconducting ceramic oxide and a second ceramic oxide material having a lower melting point than the superconducting ceramic oxide. The process comprises the steps of preparing a substrate, depositing the superconducting ceramic oxide and second ceramic oxide in alternate layers, and heat treating the resulting composite structure to obtain an oriented structure whereby the c-axes of the unit cells of the crystallites are predominantly normal to the surface of the substrate.

Abstract: The invention relates to a dry method for depositing a material on a substrate having nucleating sites for the material which includes deposition of a material in the vapor phase on the substrate and simultaneous ablation of the substrate by ablation methods for controlled removal of the nucleating sites from the substrate. The removal of the nucleating sites is controlled to minimize or selectively prevent coating of the substrate by the material. The method can be used to form material patterns on the substrate such as electrical circuits or for adhering material to a substrate that is difficult to metallize such as organic polymers or ceramics.

Abstract: A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrO.sub.x film forming layer. The process is carried out at approximately room temperature.The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown film to about 500.degree. C. The rapid thermal anneal step preferably comprises a series of at least five separte pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.

Abstract: The invention is a room-temperature dry process for texturing copper on polyester, to improve adhesion of coatings to the copper surface through mechanical as well as chemical bonding. An iodine plasma is produced by backfilling an evacuated chamber with iodine and applying an RF potential. The iodine plasma includes both positive and negative iodine ions. Unprotected surface areas of the copper form a copper iodide; when the copper iodide is removed, the remaining surface is highly textured. The associated polyester is not damaged. The copper iodide is conveniently removed by a 10% hydrochloric acid solution which has no damaging effects on the associated polyester or on the metallic copper, or on associated polyester in a plastic laminated with copper.