Patents by Inventor Dennis Sean Carr

Dennis Sean Carr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11710674
    Abstract: Various embodiments disclosed relate to a substrate for a semiconductor device. The substrate includes a first major surface and a second major surface opposite the first major surface. The substrate further includes a cavity defined by a portion of the first major surface. The cavity includes a bottom dielectric surface and a plurality of sidewalls extending from the bottom surface to the first major surface. A first portion of a first sidewall includes a conductive material.
    Type: Grant
    Filed: March 29, 2022
    Date of Patent: July 25, 2023
    Assignee: Intel Corporation
    Inventors: Yi Elyn Xu, Bilal Khalaf, Dennis Sean Carr
  • Publication number: 20220223487
    Abstract: Various embodiments disclosed relate to a substrate for a semiconductor device. The substrate includes a first major surface and a second major surface opposite the first major surface. The substrate further includes a cavity defined by a portion of the first major surface. The cavity includes a bottom dielectric surface and a plurality of sidewalls extending from the bottom surface to the first major surface. A first portion of a first sidewall includes a conductive material.
    Type: Application
    Filed: March 29, 2022
    Publication date: July 14, 2022
    Inventors: Yi Elyn Xu, Bilal Khalaf, Dennis Sean Carr
  • Patent number: 11315843
    Abstract: Various embodiments disclosed relate to a substrate for a semiconductor device. The substrate includes a first major surface and a second major surface opposite the first major surface. The substrate further includes a cavity defined by a portion of the first major surface. The cavity includes a bottom dielectric surface and a plurality of sidewalls extending from the bottom surface to the first major surface. A first portion of a first sidewall includes a conductive material.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: April 26, 2022
    Assignee: Intel Corporation
    Inventors: Yi Elyn Xu, Bilal Khalaf, Dennis Sean Carr
  • Publication number: 20190371687
    Abstract: Various embodiments disclosed relate to a substrate for a semiconductor device. The substrate includes a first major surface and a second major surface opposite the first major surface. The substrate further includes a cavity defined by a portion of the first major surface. The cavity includes a bottom dielectric surface and a plurality of sidewalls extending from the bottom surface to the first major surface. A first portion of a first sidewall includes a conductive material.
    Type: Application
    Filed: December 28, 2016
    Publication date: December 5, 2019
    Inventors: Yi Elyn Xu, Bilal Khalaf, Dennis Sean Carr