Abstract: A method, device and system for monitoring ionizing radiation, and design structures for ionizing radiation monitoring devices. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.

Abstract: A method, device and system for performing on-chip testing are presented. In particular, the present invention provides a method, device and system for reducing noise due to large changes in current that occur during logical built-in self testing (LBIST) operations in integrated circuits. The method includes executing a first logical built-in self test sequence for a first logic region within an integrated circuit, subsequently executing a second logical built-in self test sequence for a second logic region within the integrated circuit, wherein the second test sequence is offset from the first test sequence by one or more clock cycles.

Abstract: A device and system for monitoring ionizing radiation. The device including: a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and a cathode of the diode coupled to a precharged node of a clocked logic circuit, an output state of the clocked logic circuit responsive a change in state of the precharged node, a state of the precharged node responsive to ionizing radiation induced charge collected by a depletion region of the diode and collected in the cathode.

Abstract: A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.

Abstract: A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.

Abstract: This specification describes means that permit the variation of circuits, particularly latch circuits, used in programmable logic array chips (PLAs). The latch circuits are changeable to enable the selection of one of three different latch configurations to be used or in combination on the same PLA chip. The differences in the circuit configurations of the different types of latches occur only in metallization pattern of the chip so that chips with different latch configurations can be manufactured with a minimum of different processing steps.