Abstract: An integrated circuit having a node that is supplied by a first supply potential and is connected to a second supply potential in such a way that a leakage current flows between the node and the second supply potential, a detection circuit that is configured to detect a signal injected between the node and the second supply potential, the temporal variation of which is fast compared to a temporal variation of the leakage current, and a compensation circuit that is configured to compensate for a deviation in the potential of the node from the first supply potential with a delay which is large compared to the temporal variation of the signal.

Abstract: An integrated circuit having a node that is supplied by a first supply potential and is connected to a second supply potential in such a way that a leakage current flows between the node and the second supply potential, a detection circuit that is configured to detect a signal injected between the node and the second supply potential, the temporal variation of which is fast compared to a temporal variation of the leakage current, and a compensation circuit that is configured to compensate for a deviation in the potential of the node from the first supply potential with a delay which is large compared to the temporal variation of the signal.

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract: A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor.

Abstract: A bandgap circuit, a starter circuit, and a monitoring circuit for a bandgap circuit including a bandgap reference circuit having a first branch and a second branch, the first branch having a first node, the second branch having a second node, such that a potential at the first node is equal to a potential at the second node in an equilibrium of the bandgap reference circuit. The bandgap reference circuit further having a feedback node for a feedback signal and a feedback circuit coupled to the first and second nodes and adapted to provide a feedback signal to the feedback node based upon a comparison of the potentials at the first and second nodes.

Abstract: A circuit for detecting, whether a voltage difference is below a desired voltage difference comprises a voltage shift resistor, a current provider and a detection circuit. The current provider provides a current flowing through the voltage shift resistor such that the desired voltage difference across the voltage shift resistor is determined by a reference signal. The detection circuit is configured to compare a first voltage at a first input with a voltage at a second input to obtain a signal. The voltage shift resistor is coupled between a conductor for a second voltage and the second input, such that the voltage at the second input differs from the second voltage by the desired voltage difference, and wherein the detection circuit is configured to provide the signal, such that the signal indicates, whether the voltage difference between the first and the second voltage is below the desired voltage difference.

Abstract: Embodiments according to the present invention relate to a bandgap circuit, a starter circuit and a monitoring circuit for a bandgap circuit comprising a bandgap reference circuit comprising a first branch and a second branch, the first branch comprising a first node, the second branch comprising a second node, such that a potential at the first node is equal to a potential at the second node in an equilibrium of the bandgap reference circuit. The bandgap reference circuit further comprises a feedback node for a feedback signal and a feedback circuit coupled to the first and second nodes and adapted to provide a feedback signal to the feedback node based upon a comparison of the potentials at the first and second nodes.

Abstract: A circuit for providing a desired voltage difference in dependence on a reference signal, the circuit including a first resistor; a second resistor; a regulation circuit configured to regulate a current flowing through the first resistor, such that a voltage difference across the first resistor is determined by the reference signal; and a current mirror, wherein the current mirror is configured to mirror the current flowing through the first resistor to obtain a mirrored current flowing through the second resistor, such that the desired voltage difference is obtained across the second resistor.